EEWORLDEEWORLDEEWORLD

Part Number

Search

FR307

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size29KB,2 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Download Datasheet Parametric Compare View All

FR307 Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD

FR307 Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknow
FR301 - FR307-STR
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
FAST RECOVERY
RECTIFIER DIODES
DO-201AD
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 3 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
FR301 FR302 FR303 FR304 FR305 FR306 FR307
FR307
-STR
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
1000
700
1000
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
Trr
200
1.3
10
150
150
60
- 65 to + 150
- 65 to + 150
250
500
250
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 01 : January 10, 2004

FR307 Related Products

FR307 FR305 FR306 FR307-STR FR301 FR303 FR302 FR304
Description 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27 FAST RECOVERY RECTIFIER fast recovery rectifier diodes fast recovery rectifier diodes fast recovery rectifier diodes fast recovery rectifier diodes
Maker SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi
Reach Compliance Code unknow unknow unknown unknown unknown unknown unknown unknown

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 586  943  273  1993  1709  12  19  6  41  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号