FR30A02 thru FR30JR02
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V
RRM
DO-5 Package
V
RRM
= 50 V - 600 V
I
F
= 30 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR30A(R)02 FR30B(R)02 FR30D(R)02 FR30G(R)02 FR30J(R)02 Unit
50
35
50
30
300
-40 to 125
-40 to 150
100
70
100
30
300
-40 to 125
-40 to 150
200
140
200
30
300
-40 to 125
-40 to 150
400
280
400
30
300
-40 to 125
-40 to 150
600
420
600
30
300
-40 to 125
-40 to 150
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 30 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR30A(R)02 FR30B(R)02 FR30D(R)02 FR30G(R)02 FR30J(R)02 Unit
1.4
25
10
1.4
25
10
1.4
25
10
1.4
25
10
1.4
25
10
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
200
250
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.46
0.46
0.46
0.46
0.46
°C/W
www.genesicsemi.com
1
京公网安备 11010802033920号
EEWORLD
