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FR605G

Description
6 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size38KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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FR605G Overview

6 A, 600 V, SILICON, RECTIFIER DIODE

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
FR601G THRU FR607G
FAST RECOVERY PLASTIC RECTIFIER
VOLTAGE:50-1000V
CURRENT:6.0A
FEATURES
·Fast
switching
·Low
leakage
·Low
forward voltage drop
·High
current capability
·High
surge capability
·High
reliability
R-6
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.38 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
FR6
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 6.0A
DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=55°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Notes:
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
01G
50
35
50
FR6
02G
100
70
100
FR6
03G
200
140
200
FR6
04G
400
280
400
6.0
200
1.3
10
FR6
05G
600
420
600
FR6
06G
800
560
800
FR6
units
07G
1000
V
700
V
1000
V
A
A
V
I
R
150
t
rr
C
J
150
65
250
500
µA
nS
pF
1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
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FR605G FR601G FR602G FR603G FR604G FR606G FR607G
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