FS02...N
SURFACE MOUNT SCR
SOT223
(Plastic)
On-State Current
1.25 Amp
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 800 V
These series of
Silicon Controlled
R
ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface mount
technology.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
On-state Current*
Average On-state Current*
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
CONDITIONS
Half Cycle,
Θ
= 180 º, T
tab
= 95 ºC
Half Cycle,
Θ
= 180 º, T
tab
= 95 ºC
Half Cycle, 60 Hz, T
j
= 25 ºC
Half Cycle, 50 Hz, T
j
= 25 ºC
t
p
= 10ms, Half Cycle
I
GR
= 10 µA, T
j
= 25 ºC
20 µs max.
20 µs max.
20 ms max.
Min.
1.25
0.8
25
22.5
2.5
8
1.2
3
0.2
+125
+150
260
Max.
Unit
A
A
A
A
A
2
s
V
A
W
W
ºC
ºC
ºC
I
T(RMS)
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
-40
-40
10s max.
* with 5 cm
2
copper (e= 35µm) surface under tab.
SYMBOL
PARAMETER
Repetitive Peak Off State
Voltage
CONDITIONS
R
GK
= 1 KΩ
B
200
VOLTAGE
D
400
M
600
N
800
Unit
V
V
DRM
V
RRM
Jun - 02
FS02...N
SURFACE MOUNT SCR
Electrical Characteristics
SYMBOL
PARAMETER
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
On-state Threshold Voltage
Dinamic Resistance
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage
Rise
CONDITIONS
MIN
MAX
V
D
= V
DRM
, R
GK
= 1KΩ, T
j
= 125 ºC MAX
V
R
= V
RRM
,
T
j
= 25 ºC MAX
at I
T
= 1.6 Amp, tp = 380 µs, T
j
= 25 ºC MAX
T
j
= 125 ºC
MAX
T
j
= 125 ºC
MAX
V
D
= 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
MAX
V
D
= V
DRM
, R
L
= 3.3KΩ, R
GK
= 1KΩ, MIN
T
j
= 125 ºC
V
D
= 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
I
T
= 50 mA , R
GK
= 1KΩ, T
j
= 25 ºC
I
G
= 1 mA , R
GK
= 1KΩ, T
j
= 25 ºC
V
D
= 0.67 x V
DRM
, R
GK
= 1KΩ,
T
j
= 125 ºC
MAX
MAX
MIN
MIN
01
1
20
SENSITIVITY
04
15
50
02
200
500
5
1.45
0.9
150
0.8
0.1
5
6
15
15
50
25
60
10
20
03
20
200
Unit
µA
µA
V
V
mΩ
V
V
mA
mA
V/µs
A/µs
I
GT
I
DRM
/ I
RRM
V
TM
V
T(O)
r
d
V
GT
V
GD
I
H
I
L
dv / dt
di / dt
R
th(j-l)
R
th(j-a)
Critical Rate of Current Rise I
G
= 2 x I
GT
Tr
≤
100 ns, F = 60 Hz,
T
j
= 125 ºC
Thermal Resistance
Junction-Leads for DC
Thermal Resistance
Junction-Ambient
ºC/W
ºC/W
PART NUMBER INFORMATION
F
FAGOR
SCR
CURRENT
S
02
01
B
N
00
RB
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jun - 02
FS02...N
SURFACE MOUNT SCR
Fig. 1: Maximum average power dissipation
versus average on-state current
P (W)
1.4
360 º
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and T tab).
P (W)
1.4
Rth (j-l)
T tab (ºC)
-85
1.2
1.0
0.8
0.6
0.4
α
1.2
DC
1.0
Rth (j-a)
α
= 180 º
α
= 120 º
α
= 90 º
-95
0.8
-105
0.6
0.4
-115
α
= 60 º
0.2
0.0
0
α
= 30 º
0.2
IT(AV)(A)
0.0
0
20
40
60
80
-125 Tamb (ºC)
100 120 140
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig. 3: Average on-state current versus tab
temperature
I T(AV) (A)
1.6
DC
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a) / Rth(j-a)
1.00
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Igt (Tj)
Igt (Tj = 25 ºC)
10.0
9.0
8.0
7.0
6.0
Igt
α
= 180 º
0.10
Standard foot print,
e (Cu) = 35 µm
T lead (ºC)
0.01
1E-3
tp (s)
1E-2
1E-1
1E+0
1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
I TSM (A)
25
Tj initial = 25 ºC
Ih (Tj)
Ih (Tj = 25 ºC)
20
15
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0
20 40 60 80 100 120 140
Tj (ºC)
0
1
10
100
1000
Number of cycles
Ih
10
5
Jun - 02
FS02...N
SURFACE MOUNT SCR
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp
≤
10 ms, and corresponding value of I
2
t.
ITSM(A). I
2
t (A
2
s)
100
Tj initial = 25 ºC
Tj initial
25 ºC
ITSM
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
100
10
Tj max
10
I
2
t
1
Tj max
Vto = 1.05 V
Rt = 0.150
Ω
1
1
10
tp(ms)
0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VTM(V)
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
16º max. (4x)
B
C
10º max.
H
E
D
F
I
J
K
REF.
A
B
C
D
E
F
G
H
I
J
K
Min.
6.30
6.70
3.30
-
-
2.95
0.65
1.50
0.50
-
0.25
G
DIMENSIONS
Milimeters
Typ.
6.50
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.60
0.02
0.30
Max.
6.70
7.30
3.70
-
-
3.15
0.85
1.70
0.70
0.05
0.35
Weight: 0.11 g
FOOT PRINT
3.3
1.5
(3x) 1
2.3
6.4
1.5
4.6
Jun - 02
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