EEWORLDEEWORLDEEWORLD

Part Number

Search

STP45N10FI

Description
N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size286KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

STP45N10FI Overview

N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR

STP45N10FI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionISOWATT220, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)400 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)24 A
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
®
STP45N10
STP45N10FI
N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI
POWER MOS TRANSISTOR
TYPE
STP45N10
STP45N10FI
V
DSS
100 V
100 V
R
DS(on)
< 0.035
< 0.035
I
D
45 A
24 A
s
s
s
s
s
s
s
s
TYPICAL R
DS(on)
= 0.027
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
ISOWATT220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS. Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STP45N10
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
V
ISO
T
stg
T
j
June 1998
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
STP45N10FI
100
100
±
25
45
32
180
150
1
-65 to 175
175
24
17
180
45
0.3
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
1/10
Who has a tool for WINCE remote debugging
Does anyone have the tools for WINCE remote debugging: Remote Call Profiler, Remote Kernel Tracker, Remote System Information, Remote Performance Monitor? Please send them to my email address xiaopaop...
liumapple Embedded System
Could you please check where the original post of this event is?
I participated in an event in the forum before. I remember it ended on July 24th. I can’t find the specific event post anymore. I don’t know if I remembered it wrongly? Please give me some guidance if...
lising Talking
Ask about the screen
The 4.3-inch touch screen used to work, but today it suddenly had no display. It was white when uboot started, and there was no display after Linux started. The strange thing is that the touch functio...
寒塘雁迹 ARM Technology
I am going to use direct digital frequency synthesis technology to generate a specific waveform. Can anyone recommend a good DAC module? ?
As the title says, the DAC speed should be fast, high-speed DAC; the integrated op amp should also be a high-speed op amp. I have an STM32 microcontroller and an FPGA as the controller, and I can use ...
DevilMayCry Discrete Device
Crystal oscillator circuit
Why can the vibration be activated only when C2 is removed?...
chilezhima Analog electronics
Show the process of WEBENCH design + pressure sensor
1. Enter the TI design page and select the pressure sensor2. Select the sensor and start designing3. View the working parameters4. View the schematic diagram and BOM5. View the supporting parts inform...
常见泽1 Analogue and Mixed Signal

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1696  979  2471  1090  1962  35  20  50  22  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号