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STP3NC60FP

Description
N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size105KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STP3NC60FP Overview

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

STP3NC60FP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)100 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)3 A
Maximum drain current (ID)3 A
Maximum drain-source on-resistance3.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
STP3NC60
STP3NC60FP
N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP
PowerMesh™ II MOSFET
TYPE
STP3NC60
STP3NC60FP
s
s
s
s
s
V
DSS
600 V
600V
R
DS(on)
<3.6
<3.6
I
D
3A
2A
TYPICAL R
DS
(on) = 3.3
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
1
2
3
1
2
3
TO-220
TO-220FP
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
-
–60 to 150
150
(1)I
SD
≤3A,
di/dt
≤100A/µs,
V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*)Limited only by maximum temperature allowed
Value
STP3NC60
600
600
±30
3
1.9
12
80
0.64
3.5
2000
3
1.9(*)
12(*)
40
0.32
STP3NC60FP
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(•)Pulse width limited by safe operating area
May 2000
1/9

STP3NC60FP Related Products

STP3NC60FP STP3NC60
Description N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET
Is it Rohs certified? conform to conform to
Maker STMicroelectronics STMicroelectronics
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compli _compli
Avalanche Energy Efficiency Rating (Eas) 100 mJ 100 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (Abs) (ID) 3 A 3 A
Maximum drain current (ID) 3 A 3 A
Maximum drain-source on-resistance 3.6 Ω 3.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 40 W 80 W
Maximum pulsed drain current (IDM) 12 A 12 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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