STP32N05L datasheet, PDF - EEWORLD Datasheet

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STP32N05L: DescriptionN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size184KB，10 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STP32N05L Overview

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP32N05L Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	32 A
Maximum drain current (ID)	32 A
Maximum drain-source on-resistance	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	105 W
Maximum pulsed drain current (IDM)	128 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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STP32N05L

STP32N05LFI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

STP32N05L

STP32N05LFI

DSS

50 V

DS( on)

< 0.055

Ω

< 0.055

Ω

32 A

19 A

TYPICAL R

DS(on)

= 0.045

Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

LOGIC LEVEL COMPATIBLE INPUT

175 C OPERATING TEMPERATURE

APPLICATION ORIENTED

CHARACTERIZATION

TO-220

ISOWATT220

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

STP32N05L

D S

DG R

D M

(•)

tot

ISO

stg

Drain-source Voltage (V

= 0)

Drain- gate Voltage (R

= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T

= 25

Drain Current (continuous) at T

= 100 C

Drain Current (pulsed)

Total Dissipation at T

= 25

Derating Factor

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

Value

STP32N05LFI

128

105

0.7



-65 to 175

175

128

0.27

2000

Unit

(•) Pulse width limited by safe operating area

November 1996

1/10

STP32N05L Related Products

	STP32N05L	STP32N05LFI
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	STMicroelectronics	STMicroelectronics
Parts packaging code	TO-220AB	TO-220AB
package instruction	TO-220, 3 PIN	ISOWATT220, 3 PIN
Contacts	3	3
Reach Compliance Code	_compli	_compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	200 mJ	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (Abs) (ID)	32 A	19 A
Maximum drain current (ID)	32 A	19 A
Maximum drain-source on-resistance	0.055 Ω	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	105 W	40 W
Maximum pulsed drain current (IDM)	128 A	128 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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