DSEI 2x 61-04/06C
Fast Recovery
Epitaxial Diode (FRED)
I
FAVM
= 2x 60 A
V
RRM
= 400/600 V
t
rr
=
35 ns
V
RSM
V
440
640
V
RRM
V
400
600
Type
miniBLOC, SOT-227 B
DSEI 2x 61-04C
DSEI 2x 61-06C
E72873
Symbol
I
FRMS
I
FAVM
①
I
FRM
I
FSM
Test Conditions
Maximum Ratings (per diode)
100
60
800
550
600
480
520
1510
1490
1150
1120
-40...+150
150
-40...+150
A
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
2
Features
●
T
VJ
= T
VJM
T
C
= 70°C; rectangular, d = 0.5
t
P
< 10 µs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
●
●
●
●
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
It
2
●
●
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
●
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 60 A;
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque (M4)
Applications
●
●
●
●
180
2500
1.5/13
1.5/13
30
●
Nm/lb.in.
Nm/lb.in.
g
●
●
●
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Characteristic Values (per diode)
typ.
max.
200
100
14
1.5
1.8
1.13
4.7
0.7
0.05
µA
µA
mA
V
V
V
mΩ
K/W
K/W
50
21
ns
A
Advantages
●
●
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
●
●
●
For power-loss calculations only
T
VJ
= T
VJM
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
I
F
= 1 A; -di/dt = 200 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 350 V; I
F
= 60 A; -di
F
/dt = 480 A/µs
L
≤
0.05 µH; T
VJ
= 100°C
35
19
①
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
1-3
DSEI 2x 61-04/06C
180
160
140
4
I
F
= 60 A
5
T
VJ
= 100°C
V
R
= 350 V
max.
80
T
VJ
= 100°C
V
R
= 350 V
max.
60
I
F
= 60 A
I
F
120
100
80
60
40
20
0
0.0
0
0.5
1.0
1.5
2.0
2.5
1
T
VJ
= 25°C
100°C
150°C
Q
r
[ C]
3
120 A
60 A
30 A
I
RM
[A]
40
[A]
120 A
60 A
30 A
2
20
1
typ.
typ.
0
10
100
1000
0
200
400
600
800
1000
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
1.4
0.8
max.
-di
F
/dt [A/ s]
Fig. 2 Typ. recovery charge
Q
r
versus -di
F
/dt
20
T
VJ
= 100°C
V
R
= 350 V
-di
F
/dt [A/ s]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
1000
T
VJ
= 125°C
I
F
= 60 A
1.2
0.6
1.0
I
F
= 60 A
16
800
K
F
0.8
I
RM
Q
R
t
rr
0.4
V
FR
12
[V]
8
600
[ s]
0.2
120 A
60 A
30 A
400
t
fr
[ns]
0.6
4
typ.
V
FR
t
fr
200
0.4
0
40
80
120
160
0.0
0
200
400
600
800
1000
0
0
0
200 400 600 800 1000 1200
T
J
[°C]
Fig. 4 Typ. dyn. parameters vs.
junction temperature
1
-di
F
/dt [A/ s]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/ s]
Fig. 6 Typ. peak forward voltage
V
FR
versus -di
F
/dt
Z
thJC
0.1
[K/W]
0.01
0.0001
0.001
0.01
0.1
1
10
t [ms]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
3-3
Power technology
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