DSEI 2x30-04/06
DSEI 2x31-04/06
Fast Recovery
Epitaxial Diode (FRED)
I
FAVM
= 2x 30 A
V
RRM
= 400/600 V
t
rr
=
35 ns
V
RSM
V
440
640
V
RRM
V
400
600
Type
miniBLOC, SOT-227 B
DSEI 2x 30-04C DSEI 2x 31-04C
DSEI 2x 30-06C DSEI 2x 31-06C
DSEI 2x 30
DSEI 2x 31
E72873
Symbol
I
FRMS
I
FAVM
①
I
FRM
I
FSM
Test Conditions
Maximum Ratings (per diode)
70
30
375
300
320
260
280
450
420
340
320
-40...+150
150
-40...+150
A
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
Nm/lb.in.
Nm/lb.in.
g
2
T
VJ
= T
VJM
T
C
= 85°C; rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Features
●
●
●
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
It
2
●
●
●
●
●
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A;
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque (M4)
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Applications
●
100
2500
1.5/13
1.5/13
30
●
●
●
●
●
●
Characteristic Values (per diode)
typ.
max.
100
50
7
1.4
1.6
1.01
7.1
1.25
0.05
µA
µA
mA
V
V
V
mΩ
K/W
K/W
ns
A
●
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
●
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
For power-loss calculations only
T
VJ
= T
VJM
●
●
●
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 350 V; I
F
= 30 A; -di
F
/dt = 240 A/µs
L
≤
0.05
µH;
T
VJ
= 100°C
35
10
50
11
①
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
20170315a
© 2017 IXYS All rights reserved
1-3
DSEI 2x30-04/06
DSEI 2x31-04/06
120
100
80
3.0
2.5
2.0
T
VJ
= 100°C
V
R
= 350 V
40
T
VJ
= 100°C
V
R
= 350 V
max.
30
T
VJ
= 150°C
100°C
25°C
max.
I
F
= 37 A
74 A
37 A
18.5 A
I
F
[A]
Q
r
1.5
I
RM
20
60
40
20
0
0
[ C]
1.0
[A]
10
I
F
= 37 A
74 A
37 A
18.5 A
typ.
0.5
typ.
0.0
1
2
1
10
100
1000
0
0
200
400
600
V
F
[V]
Fig. 1 Forward current
vs. voltage drop
1.4
0.6
0.5
0.4
1.0
-di
F
/dt [A/ s]
Fig. 2 Recovery charge
versus -di
F
/dt
-di
F
/dt [A/ s]
Fig. 3 Peak reverse current
versus -di
F
/dt
20
1000
1.2
16
max.
I
F
= 37 A
74 A
37 A
18.5 A
800
t
fr
V
FR
12
[V]
8
V
FR
t
fr
600
K
f
0.8
I
RM
t
rr
0.3
[ns]
400
[ s]
0.2
0.6
0.1
Q
r
typ.
4
200
0.4
0
40
80
120
160
0.0
0
200
400
600
0
0
0
T
J
[°C]
Fig. 4 Dynamic parameters
vs. junctin temperature
2
1
-di
F
/dt [A/ s]
Fig. 5 Recovery time
versus-di
F
/dt
200
400
-di
F
/dt [A/ s]
600
Fig. 6 Peak forward voltage
versus-di
F
/dt
Z
thJC
0.1
[K/W]
0.01
0.0001
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions
20170315a
© 2017 IXYS All rights reserved
3-3
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