NPN Silicon AF Transistor
BC 846 W ... BC 850 W
Features
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30Hz and 15 kHz
q
Complementary types: BC 856 W, BC 857 W,
BC 858 W,BC 859 W,
BC 860 W (PNP)
Type
BC 846 AW
BC 846 BW
BC 847 AW
BC 847 BW
BC 847 CW
BC 848 AW
BC 848 BW
BC 848 CW
BC 849 BW
BC 849 CW
BC 850 BW
BC 850 CW
Marking
1 As
1 Bs
1 Es
1 Fs
1 Gs
1 Js
1 Ks
1 Ls
2 Bs
2 Cs
2 Fs
2 Gs
Ordering code
(tape and reel)
Q62702-C2319
Q62702-C2279
Q62702-C2304
Q62702-C2305
Q62702-C2306
Q62702-C2307
Q62702-C2308
Q62702-C2309
Q62702-C2310
Q62702-C2311
Q62702-C2312
Q62702-C2313
Pin Configuration
1
2
3
B
E
C
Package
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
Semiconductor Group
1
04.96
BC 846W ... BC 850W
Maximum Ratings
Description
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector peak current
Total power dissipation,
T
S
= 115 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
R
th JA
R
th JS
≤
240
≤
105
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
BC846W BC 847 W
BC 849 W BC 848 W
BC 840 W
65
80
80
6
45
50
50
6
100
200
250
150
–65 to 150
30
30
30
5
Unit
V
V
V
V
mA
mA
mW
˚C
˚C
K/W
K/W
1)
Package
mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/1 cm
2
Cu.
Semiconductor Group
2
BC 846W ... BC 850W
Characteristic
at
T
A
= 25 ˚C, unless otherwise specified.
Description
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V
(BR)CBO
Collector-base breakdown voltage
1)
I
C
= 100
µ
A
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V
(BR)CBO
Collector-emitter breakdown voltage
I
C
= 10
µ
A,
V
BE
= 0
BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V
(BR)EBO
Emitter-base breakdown voltage
I
E
= 10
µ
A
BC 846 W, BC 847 W
BC 848 W, BC 849 W
BC 850
Collector-base cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 ˚C
I
CBO
–
–
–
–
–
110
200
420
V
CEsat
–
–
V
CEsat
–
–
V
CEsat
580
–
660
–
700
770
700
900
–
–
mV
90
900
250
650
mV
–
–
140
250
480
180
290
520
15
5
–
–
–
220
450
800
mV
nA
µA
–
V
65
45
30
80
50
30
80
50
30
6
5
–
–
–
–
–
–
–
–
–
–
–
–
V
–
–
–
V
–
–
–
V
–
–
–
–
Ratings
typ.
max.
Unit
h
FE
DC current gain
I
C
= 10
µ
A,
V
CE
= 5 V BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
I
C
= 2 mA,
V
CE
= 5 V
BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 0.5 mA
I
C
= 10 mA,
V
CE
= 5 mA
1)
Pulse
test :
t
≤
300
µ
s,
D=
2 %.
Semiconductor Group
3
BC 846W ... BC 850W
Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Description
Symbol
min.
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
f
T
–
C
obo
–
C
ibo
–
10
–
kΩ
–
–
–
2.7
4.5
8.7
–
–
–
10
–4
–
–
–
1.5
2.0
3.0
–
–
–
-
–
–
–
200
330
600
–
–
–
µS
–
–
–
18
30
60
1.4
1.4
1.2
1.0
–
–
–
dB
–
–
–
V
n
BC 850 W
–
–
0.135
4
3
4
4
µV
2
–
pF
250
–
pF
MHz
Ratings
typ.
max.
Unit
Short-circuit input impedance
h
11e
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
Open-circuit reverse voltage transfer ratio
h
12e
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
Short-circuit forward current transfer ratio
h
21e
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
Open-circuit output admittance
h
22e
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 kΩ
f = 30 Hz ... 15 kHz
f = 1 kHz,
∆f
= 200 Hz
Equivalent noise voltage
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 kΩ
f = 10 Hz ... 50 Hz
Curves see BC 846 ... BC 840
Semiconductor Group
4
F
BC 849 W
BC 850 W
BC 849 W
BC 850 W
BC 846W ... BC 850W
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector-base capacitance
C
CB0
=
f
(V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(V
EB0
)
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Semiconductor Group
5
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