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SM532014001XSG6

Description
DRAM
Categorystorage    storage   
File Size166KB,24 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM532014001XSG6 Overview

DRAM

SM532014001XSG6 Parametric

Parameter NameAttribute value
MakerSMART Modular Technology Inc
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
SMART
®
SM5320140U1XSUU
May 13, 1996
Modular Technologies
4MByte (1M x 32) DRAM Module - 1Mx4 based
72-pin SODIMM
Features
Standard
:
JEDEC (FPM only)
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
1K
Device Physicals
:
300mil TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
2.350" x 1.000"
No. of sides
:
Double-sided
Mating Connector (Examples)
Horizontal
:
AMP- 177827-1 (3.3V,
AMP- 177827-2 (3.3V,
AMP- 177827-3 (5.0V,
AMP- 177827-4 (5.0V,
Part Numbers
SM532014001XSUU
SM532014011XSUU
SM532014081XSUU
SM532014091XSUU
:
:
:
:
FPM,
FPM,
EDO,
EDO,
5.0V
3.3V
5.0V
3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320130UUXSUU :
Gold)
Tin)
Gold)
Tin)
1Mx32,
1Mx16 based.
Functional Diagram
CAS3#
CAS2#
CAS1#
CAS0#
RAS0#
1Mx8
Block
DQ0~DQ7
1Mx8
Block
DQ8~DQ15
1Mx8
Block
DQ16~DQ23
1Mx8
Block
DQ24~DQ31
RAS2#
DQ0 ~ DQ31
Notes: 1.
2.
3.
4.
OEs# of all DRAMs are grounded.
WE# to all DRAMs.
A0~A9 to all DRAMs.
Each 1Mx8 block comprises of two 1Mx4 DRAMs.
V
CC
V
SS
Decoupling capacitors
to all devices.
(All specifications of this device are subject to change without notice.)
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
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