®
STN2NE06
N-CHANNEL 60V - 0.18Ω - 2A - SOT-223
STripFET™ POWER MOSFET
TYPE
STN2NE06
s
s
s
s
s
V
DSS
60 V
R
DS(on)
< 0.25
Ω
I
D
2 A
TYPICAL R
DS(on)
= 0.18
Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
2
3
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVES,etc.)
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
1
SOT-223
2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt(
1
)
T
st g
T
j
April 1999
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
Value
60
60
±
20
2
1.3
8
2.5
0.02
6
-65 to 150
150
(
1
) I
SD
≤
8 A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Unit
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/8
(•) Pulse width limited by safe operating area
STN2NE06
THERMAL DATA
R
th j-pc b
R
thj -amb
T
l
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surf ace Mounted)
Maximum Lead Temperature F or Soldering Purpose
50
60
260
o
o
C/W
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
Max Value
2
20
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µ
A
V
GS
= 0
Min.
60
1
10
±
100
Typ.
Max.
Unit
V
µ
A
µA
nA
V
DS
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS(th)
R
DS(on)
I
D(o n)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10 V
Test Con ditions
I
D
= 250
µA
I
D
= 1 A
2
Min.
2
Typ.
3
0.18
Max.
4
0.25
Unit
V
Ω
A
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(
∗
)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
= 1 A
V
GS
= 0 V
Min.
Typ.
1.8
310
45
12.5
420
61
17
Max.
Unit
S
pF
pF
pF
2/8
STN2NE06
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Time
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 30 V
R
G
= 4.7
Ω
V
DD
= 40 V
I
D
= 1 A
V
GS
= 10 V
I
D
= 2 A
V
GS
= 10 V
Min.
Typ.
9
10
12
5.1
2.7
Max.
13
13.5
17
7
4
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
r (Voff)
t
f
t
c
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V
DD
= 48 V
R
G
= 4.7
Ω
I
D
= 2 A
V
GS
= 10 V
Min.
Typ.
4.5
5
12
Max.
6
7
16
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(
∗
)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2 A
V
GS
= 0
40
50
2.5
I
SD
= 2 A
di/dt = 100 A/
µ
s
T
j
= 150
o
C
V
DD
= 30 V
Test Con ditions
Min.
Typ.
Max.
2
8
1.2
Unit
A
A
V
ns
nC
Α
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STN2NE06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
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