Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
3
BASE
1
2
2
EMITTER
COLLECTOR
3
BC848A,B,C
1
SOT-23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
30
30
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
BC848A=1J; BC848B=1K; BC848C=1L
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( I
C
=10mA )
Collector-Emitter Breakdowe Voltage
( I
C
=10 uA, V
EB
=0 )
Collector-Base Breakdowe Voltage
( I
C
=10 uA )
Emitter-Base Breakdowe Voltage
( I
E
=1.0 uA )
Collector Cutoff Current
( V
CB
=30 V )
( V
CB
=30 V, T
A
= 150
o
C )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V
(BR)CEO
30
-
-
Vdc
V
(BR)CES
30
-
-
Vdc
V
(BR)CBO
V
(BR)EBO
30
5.0
-
-
-
-
Vdc
Vdc
I
CBO
-
-
-
-
15
5.0
nAdc
uAdc
EV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Continued)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
ON CHARACTERISTICS
DC Current Gain
( I
C
= 10 uA, V
CE
= 5.0 V )
BC848A
BC848B
BC848C
BC848A
BC848B
BC848C
-
-
-
110
200
420
90
150
270
180
290
520
-
-
-
220
450
800
H
FE
-
( I
C
= 2.0 mA, V
CE
= 5.0 V )
Collector-Emitter Saturation Voltage
( I
C
= 10 mA, I
B
= 0.5 mA )
( I
C
= 100 mA, I
B
= 5.0 mA )
Base-Emitter Saturation Voltage
( I
C
= 10 mA, I
B
= 0.5 mA )
( I
C
= 100 mA, I
B
= 5.0 mA )
Base-Emitter Voltage
( I
C
= 2.0 mA, V
CE
= 5.0 V )
( I
C
= 10 mA, V
CE
= 5.0 V )
V
CE
(sat)
-
-
-
-
0.25
0.60
V
V
BE
(sat)
-
-
0.7
0.9
-
-
V
V
BE
(on)
580
-
660
-
700
770
mV
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( I
C
= 10 mA, V
CE
= 5.0 V, f=100 MH
Z
)
Output Capacitance
( V
CB
= 10 V, f=1.0 MH
Z
)
Noise Figure
( V
CE
= 5.0 Vdc, I
C
= 0.2 mA, R
S
= 2.0k ohms, f=1.0 kH
Z, BW = 200
H
Z
)
f
T
100
-
-
MH
Z
C
obo
-
-
4.5
pF
N
F
-
-
10
dB
EV. : 0
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