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CEU95P04

Description
P-Channel Enhancement Mode Field Effect Transistor
File Size431KB,4 Pages
ManufacturerCET
Websitehttp://www.cetsemi.com
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CEU95P04 Overview

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -77A, R
DS(ON)
=8.6mΩ @V
GS
= -10V.
R
DS(ON)
=12mΩ @V
GS
= -4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED95P04/CEU95P04
PRELIMINARY
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
D
G
S
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
@ T
C
= 100 C
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
e
e
Tc = 25 C unless otherwise noted
Symbol
Limit
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
-40
Units
V
V
A
A
A
W
W/ C
mJ
A
C
±
20
-77
-48
-308
73.5
0.59
320
80
-55 to 150
Single Pulsed Avalanche Current
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
1.7
62.5
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2013.July
http://www.cetsemi.com

CEU95P04 Related Products

CEU95P04 CED95P04
Description P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor
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