SSM3K123TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K123TU
Power Management Switch Applications
High-Speed Switching Applications
•
•
1.5 V drive
Low ON-resistance:
Unit: mm
R
on
= 66 mΩ (max) (@V
GS
= 1.5 V)
R
on
= 43 mΩ (max) (@V
GS
= 1.8 V)
R
on
= 32 mΩ (max) (@V
GS
= 2.5 V)
R
on
= 28 mΩ (max) (@V
GS
= 4.0 V)
0.65±0.05
2.0±0.1
1
2
3
0.166±0.05
2.1±0.1
1.7±0.1
+0.1
0.3 -0.05
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
Rating
20
±
10
4.2
8.4
800
500
150
−55~150
Unit
V
V
A
mW
°C
°C
0.7±0.05
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2: Mounted on a FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Note:
UFM
JEDEC
JEITA
TOSHIBA
1: Gate
2: Source
3: Drain
―
―
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
Test Condition
I
D
=
1 mA, V
GS
=
0V
I
D
=
1 mA, V
GS
= −
10 V
V
DS
=
20 V, V
GS
=
0V
V
GS
= ±
10 V, V
DS
=
0V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
3.0 A
I
D
=
3.0 A, V
GS
=
4.0 V
I
D
=
3.0 A, V
GS
=
2.5 V
I
D
=
1.0 A, V
GS
=
1.8 V
I
D
=
0.5 A, V
GS
=
1.5 V
Min
20
12
⎯
⎯
0.35
12.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
25
19
23
28
35
1010
162
150
13.6
9.8
3.8
17
30
−
0.8
Max
⎯
⎯
1
±1
1.0
⎯
28
32
43
66
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−
1.2
Unit
V
μA
μA
V
S
Drain-Source ON-resistance
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
mΩ
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn-on time
Switching time
Turn-off time
Drain-Source forward voltage
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
pF
V
DS
= 10 V, I
DS
= 4.2 A, V
GS
= 4 V
V
DD
=
10 V, I
D
=
1.0 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
I
D
= −4.2
A, V
GS
=
0 V
(Note 3)
nC
ns
V
Note 3: Pulse test
Start of commercial production
2007-04
1
2014-03-01
SSM3K123TU
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
OUT
IN
0V
R
G
10
μs
V
DD
=
10 V
R
G
=
4.7
Ω
Duty
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
10%
2.5 V
90%
2.5 V
0
V
DD
(c) V
OUT
V
DD
10%
90%
t
r
t
on
t
f
t
off
V
DS (ON)
Marking
3
Equivalent Circuit
(top view)
3
KKD
1
2
1
2
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
= 1 mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th,
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on).
)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2014-03-01
SSM3K123TU
r
th
– t
w
Transient thermal impedance Rth (°C/W)
Drain power dissipation P
D
(mW)
600
c
b
100
a
1000
P
D
– T
a
a: Mounted on ceramic board
(25.4mm
×
25.4mm
×
0.8t ,
2
Cu Pad : 645 mm )
b: Mounted on FR4 board
(25.4mm
×
25.4mm
×
1.6t ,
2
Cu Pad : 645 mm )
800
a
600
b
400
10
Single pulse
a: Mounted on ceramic board
(25.4mm
×
25.4mm
×
0.8t , Cu Pad : 645 mm
2
)
b: Mounted on FR4 board
(25.4mm
×
25.4mm
×
1.6t , Cu Pad : 645 mm
2
)
c: Mounted on FR4 Board
2
(25.4mm
×
25.4mm
×
1.6t , Cu Pad : 0.36 mm
×3)
0.01
0.1
1
10
100
600
200
1 1
0.001
0
-40
-20
0
20
40
60
80
100 120
140 160
Pulse width
t
w
(s)
Ambient temperature
T
a
(°C)
5
2014-03-01
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