DS2013D-80 datasheet, PDF - EEWORLD Datasheet

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DS2013D-80: DescriptionFIFO, 8KX9, 80ns, Asynchronous, CMOS, PDIP28,; Categorystorage storage; File Size18KB，1 Pages; ManufacturerDALLAS; Websitehttp://www.dalsemi.com

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DS2013D-80 Overview

FIFO, 8KX9, 80ns, Asynchronous, CMOS, PDIP28,

DS2013D-80 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	DALLAS
Reach Compliance Code	unknow
Maximum access time	80 ns
Other features	RETRANSMIT
Maximum clock frequency (fCLK)	10 MHz
period time	100 ns
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
memory density	73728 bi
Memory IC Type	OTHER FIFO
memory width	9
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX9
Output characteristics	3-STATE
Exportable	NO
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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DS2013

8192 x 9 FIFO Chip

FEATURES

PIN ASSIGNMENT

W

D8

D3

D2

D1

D0

XI

FF

Q0

Q1

Q2

Q3

Q8

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

VCC

D4

D5

D6

D7

FL/RT

RS

EF

XO/HF

Q7

Q6

Q5

Q4

R

•

First-in, first-out memory-based architecture

•

Flexible 8192 x 9 organization

•

Low-power HCMOS technology

•

Asychronous and simultaneous read/write

•

Bidirectional applications

•

Fully expandable by word width or depth

•

Empty and full warning flags

•

Half-full flag capability in single-device mode

•

Retransmit capability

•

Available in 50 ns, 65 ns, 80 ns, and 120 ns access

times

28-Pin DIP (300 and 600 Mil)

•

Optional industrial temperature range -40°C to +85°C

available designated N

PIN DESCRIPTION

W

R

RS

FL/RT

D

0-8

Q

0-8

XI

XO/HF

FF

EF

V

CC

GND

NC

–

WRITE

READ

RESET

First Load/Retransmit

Data In

Data Out

Expansion In

Expansion Out/Half Full

Full Flag

Empty Flag

5 Volts

Ground

No Connect

DESCRIPTION

The DS2013 8192 x 9 FIFO Chip implements a first-in,

first-out algorithm, featuring asynchronous read/write

operations, full, empty, and half-full flags, and unlimited

expansion capability in both word size and depth. The

DS2013 is functionally and electrically equivalent to the

DS2009 512 x 9 FIFO with the exceptions listed in the

notes for DC Electrical Characteristics of the DS2009

data sheet. Refer to DS2009 512 x 9 FIFO Chip data

sheet for detailed device description.

ECopyright

1995 by Dallas Semiconductor Corporation.

patents and other intellectual property rights, please refer to

Dallas Semiconductor databooks.

051994 1/1

DS2013D-80 Related Products

	DS2013D-80	DS2013DN-50	DS2013D-65	DS2013D-50	DS2013D-120
Description	FIFO, 8KX9, 80ns, Asynchronous, CMOS, PDIP28,	FIFO, 8KX9, 50ns, Asynchronous, CMOS, PDIP28,	FIFO, 8KX9, 65ns, Asynchronous, CMOS, PDIP28,	FIFO, 8KX9, 50ns, Asynchronous, CMOS, PDIP28,	FIFO, 8KX9, 120ns, Asynchronous, CMOS, PDIP28,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	DALLAS	DALLAS	DALLAS	DALLAS	DALLAS
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown
Maximum access time	80 ns	50 ns	65 ns	50 ns	120 ns
Other features	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT
Maximum clock frequency (fCLK)	10 MHz	15.38 MHz	12.5 MHz	15.38 MHz	7.14 MHz
JESD-30 code	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28
JESD-609 code	e0	e0	e0	e0	e0
memory density	73728 bi	73728 bit	73728 bit	73728 bit	73728 bit
Memory IC Type	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO
memory width	9	9	9	9	9
Number of functions	1	1	1	1	1
Number of terminals	28	28	28	28	28
word count	8192 words	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	70 °C	70 °C	70 °C
organize	8KX9	8KX9	8KX9	8KX9	8KX9
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	NO	NO	NO	NO	NO
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP28,.3	DIP28,.3	DIP28,.3	DIP28,.3	DIP28,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
period time	100 ns	-	80 ns	65 ns	140 ns
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V	4.5 V

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