PRELIMINARY
PDM41532
64K x 16 CMOS
Static RAM
Features
n
Description
The PDM41532 is a high-performance CMOS static
RAM organized as 65,536 x 16 bits. The PDM41532
features low power dissipation using chip enable
(CE) and has an output enable input (OE) for fast
memory access. Byte access is supported by upper
and lower byte controls.
The PDM41532 operates from a single 5.0V power
supply and all inputs and outputs are fully TTL-
compatible. The PDM41532 comes in two versions,
the standard power version PDM41532SA and a low
power version PDM41532LA. The two versions are
functionally the same and only differ in their power
consumption.
The PDM41532 is available in a 44-pin 400 mil plas-
tic SOJ and a 44-pin plastic TSOP (II) package
suitable for high-density surface assembly and is
suitable for use in high-speed applications such as
cache memory and high-speed storage.
1
2
3
4
5
6
7
n
High-speed access times
- Com’l: 10, 12, 15 and 20 ns
- Ind: 12, 15 and 20 ns
Low power operation (typical)
- PDM41532SA
Active: 350 mW
Standby: 50 mW
- PDM41532LA
Active: 300 mW
Standby: 25mW
High-density 64K x 16 architecture
Single +5V (±10%) power supply
Fully static operation
TTL-compatible inputs and outputs
Output buffer controls: OE
Data byte controls: LB, UB
Packages:
Plastic SOJ (400 mil) - SO
Plastic TSOP (II) - T
n
n
n
n
n
n
n
Functional Block Diagram
Row Address
Buffer
Row Decoder
Vcc
Vss
A8-A0
Memory
Cell
Array
256 x 128 x 32
8
9
10
11
I/O15-I/O0
Data
Input/
Output
Buffer
Sense Amp
Column
Decoder
WE
OE
UB
LB
CE
Control
Logic
Clock
Generator
Column
Address
Buffer
12
1
A15-A9
Rev. 1.3 - 4/10/98
PRELIMINARY
PDM41532
Operating Mode
Mode
Read
CE
L
OE
L
WE
H
LB
L
H
L
Write
L
X
L
L
H
L
Output Disable
L
L
Standby
H
H
X
X
H
X
X
X
H
X
UB
L
L
H
L
L
H
x
H
X
I/O7-I/O0
Output
High Impedance
Output
Input
High Impedance
Input
High Impedance
High Impedance
High Impedance
I/O15-I/O8
Output
Output
High Impedance
Input
Input
High Impedance
High Impedance
High Impedance
High Impedance
Power
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
SB
1
2
3
4
5
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Absolute Maximum Ratings
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
T
j
Rating
(1)
Com’l.
–0.5 to +7.0
–55 to +125
–55 to +125
1.5
50
125
Ind.
–0.5 to +7.0
–65 to +135
–65 to +150
1.5
50
145
Unit
V
°C
°C
W
mA
°C
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Maximum Junction Temperature
(2)
6
7
8
9
10
11
12
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
2. Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The
calculation should be of the form
: T
j
= T
a
+ P *
θ
ja
where T
a
is the ambient tempera-
ture, P is average operating power and
θ
ja
the thermal resistance of the package. For
this product, use the following
θ
ja
values:
SOJ: 59
o
C/W
TSOP: 87
o
C/W
Rev. 1.3 - 4/10/98
3
PRELIMINARY
PDM41532
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Industrial
Commercial
Description
Supply Voltage
Supply Voltage
Ambient Temperature
Ambient Temperature
Min.
4.5
0
–40
0
Typ.
5.0
0
25
25
Max.
5.5
0
85
70
Unit
V
V
°C
°C
DC Electrical Characteristics
(V
CC
= 5.0V
±
10%)
PDM41532SA
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
Test Conditions
V
CC
= Max., V
IN
= Vss to V
CC
V
CC
= Max.,
CE = V
IH
, V
OUT
= Vss to V
CC
Min.
–5
–5
–0.5
(1)
2.2
—
2.4
Max.
5
5
0.8
Vcc +
0.5
0.4
—
PDM41532LA
Min.
–5
–5
–0.5
(1)
2.2
—
2.4
Max.
5
5
0.8
Vcc +
0.5
0.4
—
µA
µA
V
V
V
V
Unit
NOTE:1.V
IL
(min) = –3.0V for pulse width less than 20 ns.
Power Supply Characteristics
-10
Symbol Parameter
I
CC
Operating Current
CE = V
IL
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
OUT
= 0 mA
I
SB
Standby Current
CE = V
IH
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
SB1
Full Standby Current
CE
≥
V
CC
– 0.2V
f=0
V
CC
= Max.,
V
IN
≥
V
CC
– 0.2V or
≤
0.2V
Power
SA
Com’l.
300
-12
-15
-20
Unit
mA
Com’l Ind. Com’l Ind. Com’l Ind.
280
290
260
270
240
250
LA
150
140
150
130
140
120
130
mA
SA
LA
SA
LA
40
30
10
5
40
30
10
5
40
30
15
10
35
25
10
5
35
25
15
10
30
20
10
5
30
20
15
10
mA
mA
mA
mA
NOTES: All values are maximum guaranteed values.
4
Rev. 1.3 - 4/10/98
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
