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WSF128K16-37HC

Description
Memory Circuit, 128KX16, CMOS, CHIP66, 1.185 INCH SQUARE, HERMETIC SEALED, CERAMIC, HIP-66
Categorystorage    storage   
File Size178KB,15 Pages
ManufacturerWhite Microelectronics
Download Datasheet Parametric View All

WSF128K16-37HC Overview

Memory Circuit, 128KX16, CMOS, CHIP66, 1.185 INCH SQUARE, HERMETIC SEALED, CERAMIC, HIP-66

WSF128K16-37HC Parametric

Parameter NameAttribute value
MakerWhite Microelectronics
package instruction1.185 INCH SQUARE, HERMETIC SEALED, CERAMIC, HIP-66
Reach Compliance Codeunknow
ECCN codeEAR99
Other features128K X 16 FLASH IS ALSO AVAILABLE
JESD-30 codeS-CHIP-P66
memory density2097152 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals66
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX16
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formIN-LINE
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formPIN/PEG
Terminal locationHEX
WSF128K16-XXX
HI-RELIABILITY PRODUCT
128K
X
16 SRAM/FLASH MODULE, SMD 5962-96900
FEATURES
s
Access Times of 35ns (SRAM) and 70ns (FLASH)
s
Access Times of 70ns (SRAM) and 120ns (FLASH)
s
Packaging
• 66-pin, PGA Type, 1.075 inch square HIP, Hermetic
Ceramic HIP (Package 400)
• 66-pin, PGA Type, 1.185 inch square HIP, Hermetic
Ceramic HIP (Package 401)
• 68 lead, Hermetic CQFP (G1U), 22.4mm (0.880 inch) square
(Package 519). Designed to fit JEDEC 68 lead 0.990” CQFJ
footprint (Fig. 2)
s
128Kx16 SRAM
s
128Kx16 5V FLASH
s
Organized as 128Kx16 of SRAM and 128Kx16 of Flash
Memory with separate Data Buses
s
Both blocks of memory are User Configurable as 256Kx8
s
Low Power CMOS
s
Commercial, Industrial and Military Temperature Ranges
s
TTL Compatible Inputs and Outputs
s
Built-in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
s
Weight
• WSF128K16-XHX
• WSF128K16-H1X
- 13 grams typical
- 13 grams typical
• WSF128K16-XG1UX - 5 grams typical
FLASH MEMORY FEATURES
s
10,000 Erase/Program Cycles
s
Sector Architecture
• 8 equal size sectors of 16K bytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
s
5 Volt Programming; 5V
±
10% Supply
s
Embedded Erase and Program Algorithms
s
Hardware Write Protection
s
Page Program Operation and Internal Program Control Time.
Note:
For programming information refer to Flash Programming 1M5
Application Note.
FIG.1
1
SD
8
SD
9
SD
10
A
13
A
14
A
15
A
16
NC
SD
0
SD
1
SD
2
11
PIN CONFIGURATION FOR WSF128K16-XHX
AND WSF128K16-XH1X
TOP VIEW
12
SWE
2
SCS
2
GND
SD
11
A
10
A
11
A
12
V
CC
SCS
1
NC
SD
3
22
33
23
SD
15
SD
14
SD
13
SD
12
OE
NC
SWE
1
SD
7
SD
6
SD
5
SD
4
FD
8
FD
9
FD
10
A
6
A
7
NC
A
8
A
9
FD
0
FD
1
FD
2
44
34
V
CC
FCS
2
FWE
2
FD
11
A
3
A
4
A
5
FWE
1
FCS
1
GND
FD
3
55
45
FD
15
FD
14
FD
13
FD
12
A
0
A
1
A
2
FD
7
FD
6
FD
5
FD
4
66
8
8
8
PIN DESCRIPTION
FD
0-15
Flash Data Inputs/Outputs
56
SD
0-15
SRAM Data Inputs/Outputs
A
0-16
SWE
1-2
SCS
1-2
OE
V
CC
GND
NC
FWE
1-2
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Flash Write Enable
Flash Chip Select
BLOCK DIAGRAM
S W E
1
S CS
1
OE
A
0
-
16
128K x 8
SRAM
128K x 8
SRAM
128K x 8
FLASH
S W E
2
S CS
2
F W E
1
F CS
1
FCS
1-2
F W E
2
F CS
2
128K x 8
FLASH
8
SD
0-7
SD
8-15
FD
0-7
FD
8-15
June 2000 Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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