5962G9656603Q9B datasheet, PDF

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5962G9656603Q9B: DescriptionBinary Counter, AC Series, Synchronous, Positive Edge Triggered, 4-Bit, Bidirectional, CMOS, DIE; Categorylogic logic; File Size416KB，29 Pages; ManufacturerCobham PLC

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5962G9656603Q9B Overview

Binary Counter, AC Series, Synchronous, Positive Edge Triggered, 4-Bit, Bidirectional, CMOS, DIE

5962G9656603Q9B Parametric

Parameter Name	Attribute value
Maker	Cobham PLC
package instruction	DIE, DIE OR CHIP
Reach Compliance Code	unknow
ECCN code	3A001.A.1.A
Counting direction	BIDIRECTIONAL
series	AC
JESD-30 code	R-XUUC-N
Load/preset input	YES
Logic integrated circuit type	BINARY COUNTER
Maximum Frequency@Nom-Su	56000000 Hz
MaximumI(ol)	0.008 A
Operating mode	SYNCHRONOUS
Number of digits	4
Number of functions	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIE
Encapsulate equivalent code	DIE OR CHIP
Package shape	RECTANGULAR
Package form	UNCASED CHIP
power supply	5 V
propagation delay (tpd)	27 ns
Certification status	Qualified
Filter level	MIL-PRF-38535 Class Q
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal location	UPPER
total dose	300k Rad(Si) V
Trigger type	POSITIVE EDGE

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REVISIONS

LTR

DESCRIPTION

Changes in accordance with NOR 5962-R129-97.

Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. –

LTG

Add appendix A. Editorial changes throughout. - LTG

Add device type 02 and 03. Update appendix A. - PHN

Change footnote 7 in section 1.5. - PHN

Add footnote 9/ to section 1.5 for device types 02 and 03. Add footnote 6/ to

table IB for maximum device cross section. Delete table III, Irradiation test

connections. - jak

Update radiation features in section 1.5 and SEP test limit in table IB. - MAA

Add equivalent test circuit and footnote 5 in figure 4. – MAA

DATE (YR-MO-DA)

96-11-21

01-12-03

04-06-21

07-09-27

07-11-05

08-05-07

10-11-15

12-05-10

APPROVED

Monica L. Poelking

Thomas M. Hess

Muhammad A. Akbar

Thomas M. Hess

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

Thomas M. Hess

CHECKED BY

Thomas M. Hess

APPROVED BY

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

Monica L. Poelking

DRAWING APPROVAL DATE

96-02-02

REVISION LEVEL

AMSC N/A

STANDARD

MICROCIRCUIT

DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

http://www.landandmaritime.dla.mil

MICROCIRCUIT, DIGITAL, ADVANCED CMOS,

RADIATION HARDENED, SYNCHRONOUS 4-BIT

UP/DOWN DUAL CLOCK COUNTER,

MONOLITHIC SILICON

SIZE

CAGE CODE

67268

5962-96566

SHEET 1 OF 28

DSCC FORM 2233

APR 97

5962-E289-12

1.3 Absolute maximum ratings. 1/ 2/ 3/

Supply voltage range (V

) .................................................................................. -0.3 V dc to +7.0 V dc

DC input voltage range (V

) ................................................................................ -0.3 V dc to V

+ 0.3 V dc

DC output voltage range (V

OUT

) ........................................................................... -0.3 V dc to V

+ 0.3 V dc

DC input current, any one input (I

).....................................................................

±10

Latch-up immunity current (I

) ............................................................................

±150

Storage temperature range (T

STG

) ....................................................................... -65°C to +150°C

Lead temperature (soldering, 5 seconds) ............................................................ +300°C

Thermal resistance, junction-to-case (θ

Case outline E ................................................................................................... See MIL-STD-1835

Case outline X ................................................................................................... 15.5°C/W

Junction temperature (T

) .................................................................................... +175°C

Maximum package power dissipation (P

Device type 01 ............................................................................................ 1.0 W

Device type 02 and 03, case outline X ........................................................ 3.3 W 4/

1.4 Recommended operating conditions. 2/ 3/

Supply voltage range (V

Device type 01 ................................................................................................. +4.5 V dc to +5.5 V dc

Device types 02 and 03 ................................................................................... +3.0 V dc to +5.5 V dc

Input voltage range (V

) ...................................................................................... +0.0 V dc to V

Maximum low level input voltage (V

).................................................................. 0.3 V

Minimum high level input voltage (V

) ................................................................. 0.7 V

Output voltage range (V

OUT

)................................................................................. +0.0 V dc to V

Case operating temperature range (T

) ............................................................... -55°C to +125°C

Maximum input rise and fall time at V

= 4.5 V (t

, t

) ......................................... 1 ns/V 5/

1.5 Radiation features.

Maximum total dose available:

Device type 01 (dose rate = 50 – 300 rads (Si)/s) ............................................. 5 x 10 Rads (Si)

Device type 02 (effective dose rate = 1 rad (Si)/s) ............................................ 1 x 10 Rads (Si) 6/

Device type 03 (dose rate = 50 – 300 rads (Si)/s) ............................................. 5 x 10 Rads (Si)

Single event phenomenon (SEP):

Device type 01:

Effective LET, no upsets (see 4.4.4.4) ............................................................ ≤80 MeV/(mg/cm ) 8/ 7/

Effective LET, no latch-up (see 4.4.4.4) .......................................................... ≤120 MeV/(mg/cm ) 8/ 7/

Device types 02 and 03:

Effective LET, no upsets (see 4.4.4.4) ............................................................ ≤108 MeV/(mg/cm ) 8/ 7/

Effective LET, no latch-up (see 4.4.4.4) .......................................................... ≤120 MeV/(mg/cm ) 8/ 7/

Dose rate upset (20 ns pulse) ............................................................................ ≥ 1 x 10 Rads (Si)/s 8/ 9/

Dose rate latch-up ............................................................................................... None 8/

Dose rate survivability ....................................................................................... ≥ 1 x 10 Rads (Si)/s 8/

Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

Unless otherwise specified, all voltages are referenced to V

The limits for the parameters specified herein shall apply over the full specified V

range and case temperature range

of -55°C to +125°C unless otherwise specified.

Per MIL-STD-883 method 1012.1 section 3.4.1, P

(Package) = (T

(max) - T

(max)) .

Derate system propagation delays by difference in rise time to switch point for t

or t

1 ns/V.

Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019,

condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room

temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2.

Radiation testing is performed on the standard evaluation circuit. (SEC).

Limits are guaranteed by design or process, but not production tested unless specified by the customer through the

purchase order or contract.

This limit is applicable for device type 01, 02, and 03 with V

≥ 4.5 V. Device types 02 and 03 do not meet this limit at

< 4.5 V..

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96566

SHEET

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those

cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 -

MIL-STD-1835 -

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at

https://assist.daps.dla.mil/quicksearch/

or from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.

ASTM INTERNATIONAL (ASTM)

ASTM-F1192 -

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion

Irradiation of Semiconductor Devices.

(Copies of this document is available online at

http://www.astm.org/

or from ASTM International, P. O. Box C700,

100 Barr Harbor Drive, West Conshohocken, PA 19428-2959).

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Truth table. The truth table shall be as specified on figure 2.

3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.

3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96566

SHEET

3.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufacturer under document

revision level control and shall be made available to the preparing and acquiring activity upon request.

3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and post-irradiation parameter limits are as specified in table IA and shall apply over the

full case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are described in table IA.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see

6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of

supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-

PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of

product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.

3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime's agent,

and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore

documentation shall be made available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 40 (see MIL-PRF-38535, appendix A).

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96566

SHEET

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