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BLF225

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size465KB,9 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric View All

BLF225 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BLF225 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)9 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)68 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

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Index Files: 822  1608  2709  1231  1829  17  33  55  25  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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