BLF276 datasheet, PDF - EEWORLD Datasheet

BLF276: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size494KB，10 Pages; ManufacturerNorth American Philips Discrete Products Div

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BLF276 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	Single
Maximum drain current (Abs) (ID)	9 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
surface mount	NO

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