G -LINK
GLT7256L08
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
Mar 2000(REV. 2.0)
Features :
∗
32K x 8-bit organization.
∗
Very high speed – 8,10,12,15 ns.
∗
Low standby power.
∗
∗
∗
∗
∗
∗
Description :
GLT7256L08 are high performance 256K bit static
random access memories organized as 32K by 8 bits
and operate at a single 3.3 volt supply. Fabricated
with G-Link Technology's very advanced CMOS sub-
Maximum 2mA for GLT7256L08.
micron technology, GLT7256L08 offer a combination
Fully static operation
of features: very high speed and very low stand-by
3.3V±5% power supply.
current. In addition, this device also supports easy
TTL compatible I/O.
memory expansion with an active LOW chip enable
Three state output.
( CE ) as well as an active LOW output enable ( OE )
Chip enable for simple memory expansion. and three state outputs.
Available in 28 PIN 300 mil SOJ and TSOP
packages.
Pin Configurations :
Function Block Diagram :
GLT7256L08
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
-1-
G -LINK
GLT7256L08
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
Mar 2000(REV. 2.0)
Pin Descriptions:
Name
A
0
- A
14
CE
OE
WE
I/O
O
- I/O
7
V
CC
GND
Function
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Data Input and Data Output
+3.3V Power Supply
Ground
Truth Table:
Mode
Not Selected
(Power Down)
Output Disabled
Read
Write
Absolute Maximum Ratings:
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High Z
High Z
D
OUT
D
IN
V
CC
Current
I
CCSB
,I
CCSB1
I
CC
I
CC
I
CC
Operation Range:
Range
Commercial
Temperature
0
o
C to + 70
o
C
V
CC
3.3V±5%
Ambient Temperature
Under Bias...................................-10°C to +80°C
Storage Temperature(plastic)....-55°C to +125°C
Capacitance
(1)
T
A
=25°C,f=1.0MHZ :
°
Voltage Relative to GND.............-0.5V to + 4.6V
Data Output Current..................................50mA
Parameter
Conditions Max. Unit
Power Dissipation......................................1.0W Sym.
1.
Stresses greater than those listed under ABSOLUTE
MAXIMUM RATING may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
C
IN
C
I/O
Input Capacitance
Input/Output
Capacitance
V
IN
=0V
V
I/O
=0V
8
10
pF
pF
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
-2-
G -LINK
GLT7256L08
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
Mar 2000(REV. 2.0)
DC Characteristics
Sym.
V
IL
V
IH
I
LI
I
LO
V
OL
V
OH
I
CC
I
CCSB
Parameter
Test Conditions
Min. Typ
(1)
-0.3
2.0
-5
-5
-
2.4
-
-
-
-
-
-
-
-
-
-
-
Max.
+0.8
V
CC
+0.3
5
5
0.4
-
-8 -10 -12 -15
110 100 90 90
15
Unit
V
V
µA
µA
V
V
mA
mA
mA
Guaranteed Input Low
Voltage
(2)
Guaranteed Input High
Voltage
(2)
Input Leakage Current
V
CC
=Max., V
IN
=0V to V
CC
Output Leakage Current V
CC
=Max., CE
≥V
IH
Output Low Voltage
V
CC
=Min.,I
OL
=8mA
Output High Voltage
V
CC
=Min., I
OH
=-4mA
Operating Power Supply V
CC
=Max., CE
≤V
IL
,
Current
I
I/O
=0mA., F=F
max(3)
Standby Power Supply
Current
V
CC
=Max., CE
≥V
IH
,
I
I/O
=0mA., F=F
max(3)
V
CC
=Max., CE
≥V
CC
.-0.2V,
V
IN
≥V
CC
. -0.2V or
I
CCSB1
Power Down Power
Supply Current
-
2
1. Typical characteristics are at V
CC
=3.3V, T
A
=25°C.
2. These are absolute values with repeat to device ground and all overshoots due to system or
tester noise are included.
3. F
MAX
=1/t
RC
.
Data Retention
(L version only)
Sym.
V
DR
I
CCDR
t
CDR
t
R
(1)
Parameter
V
CC
for Data retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operating Recovery Time
Test Conditions
CE
≥V
CC
-0.2V,
V
IN
≥V
CC
-0.2V or V
IN
≤0.2V
V
DR
=2.0V
Retention Waveform
Min.
2.0
Typ
(1)
-
Max.
3.6
30
-
-
Unit
V
µA
ns
ns
0
t
RC(2)
-
-
1. CE
≥V
DR
-0.2V, V
IN
≥V
DR
-0.2V or V
IN
≤0.2V.
2. t
RC
=Read Cycle Time.
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
-3-
G -LINK
GLT7256L08
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
Mar 2000(REV. 2.0)
Low V
CC
Data Retention Waveform (CE Controlled)
AC Test Conditions
Input Pulse Levels
Input Rise and Fall Times
Timing Reference Level
0V to 3.0V
3 ns
1.5V
Ω
Ω
Ω
Ω
AC Test Loads and Waveforms
Ω
AC Electrical Characteristics
(over the commercial operating range)
Read Cycle
Parameter
Name
-8
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time,
Output Enable to Output Valid
Chip Select to Output Low Z,
CE
Output Enable to Output in Low Z
Chip Deselect to Output in High Z,
CE
Output Disable to Output in High Z
Output Hold from Address Change
Min
8
Max
8
8
5
3
0
4
4
3
3
0
0
0
3
5
5
Min
10
-10
Max
10
10
6
3
0
0
0
3
6
6
Min
12
-12
Max
12
12
7
3
0
0
0
3
6
6
Min
15
-15
Max
15
15
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
OH
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
-4-
G -LINK
GLT7256L08
Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM
Mar 2000(REV. 2.0)
Switching Waveform (Read Cycle)
READ CYCLE1
(1,2,4)
READ CYCLE 2
(1,3,4)
READ CYCL E 3
(1)
Notes:
1. WE is High for READ Cycle.
2. Device is continuously selected CE
≤V
IL
.
3. Address valid prior to or coincident with CE transition low and/or transition high.
4. OE
≤V
IL
.
5. Transition is measured 200mV from steady state with C
L
=5pF.
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
-5-
京公网安备 11010802033920号
EEWORLD
