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BC327-16D74Z

Description
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size69KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BC327-16D74Z Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC327-16D74Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC327/328
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Parameter
Collector-Emitter Voltage
: BC327
: BC328
Collector-Emitter Voltage
: BC327
: BC328
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-50
-30
-45
-25
-5
-800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC307
: BC338
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -10mA, I
B
=0
Min.
-45
-25
I
C
= -0.1mA, V
BE
=0
-50
-30
IE= -10µA, I
C
=0
V
CE
= -45V, V
BE
=0
V
CE
= -25V, V
BE
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -300mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -1V, I
C
= -300mA
V
CE
= -5V, I
C
= -10mA, f=20MHz
V
CB
= -10V, I
E
=0, f=1MHz
100
12
100
40
-5
-2
-2
-100
-100
630
-0.7
-1.2
V
V
MHz
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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