EEWORLDEEWORLDEEWORLD

Part Number

Search

FSJ260R3

Description
Power Field-Effect Transistor, 44A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
CategoryDiscrete semiconductor    The transistor   
File Size86KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FSJ260R3 Overview

Power Field-Effect Transistor, 44A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

FSJ260R3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)44 A
Maximum drain current (ID)44 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)192 W
Maximum pulsed drain current (IDM)132 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FSJ260D, FSJ260R
Data Sheet
December 2000
File Number
4339.2
44A, 200V, 0.050 Ohm, Rad Hard, SEGR
Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100 krads of total dose hardness
to provide devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-PRF-19500, or Space equivalent of
MIL-PRF-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17667.
Features
• 44A, 200V, r
DS(ON)
= 0.050
• Total Dose
- Meets Pre-rad Specifications to 100 krad (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with V
DS
up to
80% of Rated Breakdown and V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 17nA Per-rad (Si)/s Typically
IN
TXV
TXV
H
C
K
C
E
Symbol
D
G
S
• Neutron
- Maintain Pre-rad Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
G
IN
Package
TO-254AA
G
S
D
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
PART NUMBER/BRAND
FSJ260D1
FSJ260D3
FSJ260R1
FSJ260R3
FSJ260R4
Commercial
Space
CAUTION: Beryllia Warning per MIL-PRF-19500
refer to package specifications.
©2001 Fairchild Semiconductor Corporation
FSJ260D, FSJ260R Rev. A
Several basic concepts about ARM
I need to train sales and marketing staff recently. When making the courseware, I found that several concepts are very vague. I hope those who understand can help answer them: 1. What are the so-calle...
huazisgit ARM Technology
Why does the output waveform have a DC component when an AC constant current source is connected to a pure capacitor?
[url=http://www.amobbs.com/data/attachment/forum/201303/06/170059uxpj4kwwnfpexnic.jpg.thumb.jpg][img=463,252]http://www.amobbs.com/data/attachment/forum/201303/06/170059uxpj4kwwnfpexnic.jpg.thumb.jpg[...
PSIR Power technology
The difference between boost circuit and pull-up circuit
A few days ago, I was looking at boost circuits. The purpose was to increase the output voltage of the chip I/O port. Then, I thought that using pull-up resistors could also achieve this function. Wha...
secondlife110 Power technology
How does STM8S dynamically allocate memory?
As title...
liwenjie518 stm32/stm8
The program stops at while (!(IFG1 & UTXIFG0));
When I run the program, I find that the program is stuck at the sentence in the send subroutine. It keeps running and terminating, but it is stuck at this place. What is the reason?...
面纱如雾 Microcontroller MCU
Instrument test
Hopefully the development board will work...
lmyghy Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1402  2560  135  2367  877  29  52  3  48  18 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号