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U1GC44

Description
0.9 A, 400 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size129KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

U1GC44 Overview

0.9 A, 400 V, SILICON, SIGNAL DIODE

U1GC44 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionPLASTIC, 3-4D1A, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current33 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current0.9 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
U1BC44,U1GC44,U1JC44
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
FOR HYBRID USE
l
Average Forward Current
l
Repetitive Peak Reverse Voltage
l
Mini Plastic Mold Package
: I
F (AV)
= 1.0A
: V
RRM
= 100, 400, 600V
Unit: mm
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
U1BC44
Repetitive Peak
Reverse Voltage
U1GC44
U1JC44
Average
Forward
Current
On Ceramic Substrate
On Glass−epoxy
Substrate
I
F (AV)
V
RRM
SYMBOL
RATING
100
400
600
1.0
(Ta = 75°C)
0.9
(Ta = 25°C)
30 (50Hz)
33 (60Hz)
−40~150
−40~150
V
UNIT
A
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
I
FSM
T
j
T
stg
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.06g
3−4D1A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Thermal Resistance
SYMBOL
V
FM
I
RRM
R
th (j−a)
TEST CONDITION
I
FM
= 1.0A
V
RRM
= Rated
DC
On ceramic substrate
On glass-epoxy substrate
MIN
TYP.
MAX
1.2
10
60
120
UNIT
V
µA
°C / W
STANDARD SOLDERING PAD
1
2001-07-18

U1GC44 Related Products

U1GC44 U1BC44 U1JC44
Description 0.9 A, 400 V, SILICON, SIGNAL DIODE 0.9 A, 100 V, SILICON, SIGNAL DIODE 0.9 A, 600 V, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible incompatible
package instruction PLASTIC, 3-4D1A, 2 PIN PLASTIC, 3-4D1A, 2 PIN PLASTIC, 3-4D1A, 2 PIN
Contacts 2 2 2
Reach Compliance Code unknow unknow unknow
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 0.9 A 0.9 A 0.9 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 100 V 600 V
surface mount YES YES YES
Terminal form C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL
Maker Toshiba Semiconductor - Toshiba Semiconductor
ECCN code EAR99 EAR99 -
Maximum forward voltage (VF) 1.2 V 1.2 V -
Maximum non-repetitive peak forward current 33 A 33 A -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
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