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U1JU44

Description
1 A, 600 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size133KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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U1JU44 Overview

1 A, 600 V, SILICON, SIGNAL DIODE

U1JU44 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current15 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.1 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
U1JU44
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
U1JU44
SWITCHING MODE POWER SUPPLY APPLICATIONS
Unit: mm
l
Repetitive Peak Reversw Voltage
l
Average Forward Current
l
Very Fast Reverse−Recovery Time
: V
RRM
= 600V
: I
F (AV)
= 1.0A
: t
rr
= 100ns (Max)
l
Surface Mounting Plastic Mold Package
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
RATING
600
1.0
15 (50Hz)
17 (60Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
3−4D1A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
SYMBOL
V
FM
I
RRM
t
rr
t
fr
TEST CONDITION
I
FM
= 1.0A
V
RRM
= 600V
I
F
= 1A, di / dt =
−30A
/ µs
I
F
= 1.0A
Weight: 0.06g
MIN
TYP.
MAX
2.0
100
100
250
UNIT
V
µA
ns
ns
STANDARD SOLDERING PAD
MARKING
1
2001-07-11

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