LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
1
BASE
3
COLLECTOR
2
EMITTER
BC856ALT1, BLT1
BC857ALT1, BLT1
BC858ALT1, BLT1
CLT1
Unit
V
V
1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
3
V
mAdc
2
I
C
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
θJA
P
D
556
300
R
θJA
T
J
, T
stg
2.4
417
–55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
V
(BR)CEO
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
v
V
(BR)CES
v
BC858 Series
Collector–Base Breakdown Voltage BC856 Series
(I
C
= – 10
µA)
BC857 Series
Emitter–Base Breakdown Voltage
(I
E
= – 1.0
µA)
BC858 Series
BC856 Series
BC857 Series,
BC858 Series
V
(BR)CBO
v
V
(BR)EBO
I
CBO
v
nA
µA
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M5–1/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1 BC858ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C,
(I
C
= –2.0 mA, V
CE
= –5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
Collector–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= – 0.5 mA)
Collector–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= – 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= –0.5 mA)
Base–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter on Voltage (I
C
= –2.0 mA, V
CE
= –5.0 V)
Base–Emitter Voltage
(I
C
= –10 mA, V
CE
= –5.0 V)
DC Current Gain
(I
C
= –10
µA,
V
CE
= –5.0 V)
h
FE
—
—
—
125
220
420
—
—
—
—
– 0.6
—
90
150
270
180
290
520
—
—
– 0.7
– 0.9
—
—
—
—
—
250
475
800
– 0.3
– 0.65
—
—
– 0.75
– 0.82
—
V
CE(sat)
V
V
BE(sat)
V
V
V
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= – 10 mA, V
CE
= – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= – 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= – 0.2 mA,V
CE
= – 5.0 V
dc
, R
S
= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
f
T
C
ob
NF
100
—
––
—
—
––
—
4.5
10
MHz
pF
dB
M5–2/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1
BC857/BC858
–1.0
2.0
h
FE
, NORMALIZED DC CURRENT GAIN
1.5
V
CE
= –10 V
V, VOLTAGE (VOLTS)
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
T
A
= 25°C
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
V
CE(sat)
@ I
C
/I
B
= 10
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
–2.0
1.0
T
A
= 25°C
–1.6
–55°C to +125°C
1.2
1.6
–1.2
2.0
–0.8
I
C
=
–10 mA
I
C
= –50 mA
I
C
= –200 mA
I
C
= –100 mA
2.4
–0.4
I
C
= –20 mA
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
400
300
10.0
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
C
ib
7.0
200
T
A
=25°C
5.0
V, VOLTAGE (VOLTS)
100
80
V
CE
=–10V
T
A
= 25°C
3.0
C
ob
60
40
30
20
2.0
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
M5–3/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1
BC856
h
FE
, DC CURRENT GAIN (NORMALIZED)
–1.0
V
CE
= –5.0V
T
A
= 25°C
2.0
1.0
0.5
0.2
–0.1–0.2
–1.0–2.0 –5.0–10–20 –50–100–200
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
–0.8
V
BE(sat)
@ I
C
/I
B
= 10
–0.6
–0.4
–0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
V
BE
@V
CE
= –5.0 V
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
–2.0
–1.6
–1.2
–0.8
–0.4
T
J
= 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
I
C
=
–10 mA
–20mA
–50mA
–100mA –200mA
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
θ
VB
for V
BE
–55°C to 125°C
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
40
C, CAPACITANCE (pF)
20
T
J
= 25°C
C
ib
500
200
100
50
20
V
CE
= –5.0 V
10
8.0
6.0
4.0
2.0
–0.1–0.2 –0.5
C
ob
–1.0 –2.0
–5.0 –10 –20
–50 –100
–1.0
–10
–100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
M5–4/5
LESHAN RADIO COMPANY, LTD.
BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1
1.0
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
D=0.5
0.2
SINGLE PULSE
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k 2.0k
5.0k
10k
Figure 13. Thermal Response
–200
1s
I
C
, COLLECTOR CURRENT (mA)
3 ms
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–100
–50
T
A
= 25°C
T
J
= 25°C
–10
–5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
M5–5/5
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