®
BC857B
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type
BC857B
s
Marking
3F
s
s
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
BC847B
SOT-23
APPLICATIONS
s
WELL SUITABLE FOR PORTABLE
EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
ABSOLUTE MAXIMUM RATINGS
b
O
Symbol
V
CBO
V
CEO
I
C
I
CM
P
tot
T
stg
T
j
so
te
le
r
P
uc
od
s)
t(
bs
-O
INTERNAL SCHEMATIC DIAGRAM
et
l
o
P
e
od
r
s)
t(
uc
Parameter
Value
-50
-45
-5
-100
-200
250
-65 to 150
150
Unit
V
V
V
mA
mA
mW
o
o
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Total Dissipation at T
C
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
V
EBO
C
C
June 2002
1/4
BC857B
THERMAL DATA
R
thj-amb
•
Thermal Resistance Junction-Ambient
2
Max
500
o
C/W
•
Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
EBO
V
(BR)CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Test Conditions
V
CB
= -30 V
V
CB
= -30 V
V
EB
= -5 V
I
C
= -10
µA
-50
T
C
= 150
o
C
Min.
Typ.
-1
Max.
-15
-5
-100
Unit
nA
µA
nA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
Transition Frequency
Collector-Base
Capacitance
Noise Figure
I
C
= -2 mA
-45
V
I
E
= -10
µA
-5
V
CE(sat)
∗
V
BE(sat)
∗
V
BE(on)
∗
h
FE
f
T
C
CBO
NF
I
C
= -10 mA
I
C
= -100 mA
I
C
= -10 mA
I
C
= -100 mA
I
C
= -2 mA
I
C
= -10 mA
I
C
= -2 mA
I
E
= 0
I
B
= -0.5 mA
I
B
= -5 mA
I
B
= -0.5 mA
I
B
= -5 mA
V
CE
= -5 V
V
CE
= -5 V
I
C
= -10 mA V
CE
= -5 V f = 100MHz
V
CB
= -10 V
f = 1 MHz
f = 1KHz
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
O
so
b
te
le
r
P
uc
od
V
CE
= -5 V I
C
= -0.2 mA
∆f
= 200 Hz R
G
= 2 KΩ
s)
t(
b
-O
V
CE
= -5 V
so
et
l
P
e
-0.6
220
100
od
r
-0.07
-0.25
-0.7
-0.85
-0.65
4.5
2
s)
t(
uc
V
-0.3
-0.65
V
V
V
V
-0.75
-0.82
475
MHz
pF
10
dB
V
V
2/4
BC857B
SOT-23 MECHANICAL DATA
mm
MIN.
A
B
C
D
E
F
G
H
L
M
N
O
0.85
0.65
1.20
2.80
0.95
1.9
2.1
0.38
0.3
0
0.3
0.09
TYP.
MAX.
1.1
0.95
1.4
3
1.05
2.05
2.5
0.48
0.6
0.1
0.65
0.17
MIN.
33.4
25.6
47.2
110.2
37.4
74.8
82.6
14.9
11.8
0
11.8
mils
TYP.
MAX.
43.3
37.4
55.1
118
41.3
DIM.
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
l
o
3.5
te
e
r
P
od
s)
t(
uc
98.4
18.8
23.6
3.9
25.6
6.7
80.7
0044616/B
3/4
BC857B
O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
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e
od
r
s)
t(
uc
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