BRC123EMP datasheet, PDF - EEWORLD Datasheet

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BRC123EMP: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3; CategoryDiscrete semiconductor The transistor; File Size103KB，12 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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BRC123EMP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3

BRC123EMP Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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BRC144EMP Series

NPN Built-in Resistor Transistor MPAK Series

Inverter, Driver, Switching

ADE-208-1443B (Z)

Rev.2

Sep. 2001

Features

•

Built–in Resistor Type

•

Simplifies Circuit Design

•

Reduces Board Space

•

Complementary pair with BRA144EMP series

Outline

MPAK

1. Ground (Emitter)

2. Input (Base)

3. Output (Collector)

Note: Marking is shown in below.

Device

BRC144EMP

BRC124EMP

BRC114EMP

BRC143EMP

BRC123EMP

Marking

R1 (kΩ)

Ω

4.7

2.2

R2 (kΩ)

Ω

4.7

2.2

BRC123EMP Related Products

	BRC123EMP	BRC144EMP	BRC124EMP	BRC114EMP	BRC143EMP
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	20	70	56	30	20
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON

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