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HZB6.8MWA

Description
Zener Diode, 6.74V V(Z), 4%, 0.2W, Silicon, CMPAK-3
CategoryDiscrete semiconductor    diode   
File Size64KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZB6.8MWA Overview

Zener Diode, 6.74V V(Z), 4%, 0.2W, Silicon, CMPAK-3

HZB6.8MWA Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance30 Ω
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage6.8 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance4%
Working test current5 mA
HZB6.8MWA
Silicon Planar Zener Diode for Surge Absorb
ADE-208-971A (Z)
Rev.1
Nov. 2001
Features
HZB6.8MWA has two devices in a monolithic, and can absorb surge.
CMPAK package is suitable for high density surface mounting.
Ordering Information
Type No.
HZB6.8MWA
Laser Mark
68M
Package Code
CMPAK
Pin Arrangement
3
1. Cathode
2. Cathode
3. Anode
2
1
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