IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au .
IBM11D4360B IBM11D8360B
IBM11E4360B IBM11E8360B
4M/8M x 36 DRAM Module
Features
• 72-Pin JEDEC Standard Single-In-Line
Memory Module
• Performance:
-60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Access Time From Address
t
RC
Cycle Time
60ns
15ns
30ns
-70
70ns
20ns
35ns
• High Performance CMOS process
• Single 5V,
±
0.5V Power Supply
• All inputs & outputs are fully TTL & CMOS
compatible
• Fast Page Mode access cycle
• Refresh Modes: RAS-Only, CBR and Hidden
Refresh
• 2048 refresh cycles distributed across 32ms
• 11/11 Addressing (Row/Column)
• Optimized for use in byte-write parity applications
• Au and Sn/Pb versions available
• DRAMs in SOJ package
110ns 130ns
45ns
t
PC
Fast Page Mode Cycle Time 40ns
Description
The IBM11D8360B is a 32MB industry standard
72-pin 4-byte single in-line memory module (SIMM).
The module is organized as an 8Mx36 high speed
memory array, and is configured as two 4Mx36
banks -each independently selectable via unique
RAS inputs. The assembly is intended for use in 18,
36 and 72 bit parity applications. It is manufactured
with sixteen 4Mx4 devices, each in a 300mil pack-
age, and eight 4Mx1 devices in a 300mil package.
The module is compatible with the JEDEC 72-Pin
SIMM standard. Two package offerings are available
to accomodate system spacing requirements. The
IBM11D4360B is a 16MB populated version, manu-
factured with eight 4Mx4 devices and four 4Mx4
devices.
The IBM 72-Pin SIMMs provide a high performance,
flexible 4-byte interface in a 4.25” long footprint.
Related products include the 8Mx32 non-parity
SIMM, IBM11D8320B, as well as other density offer-
ings and ECC-optimized SIMMs.
Card Outlines (Drawings shown are not to scale)
1” High
Version (32MB)
1
36 37
72
1.25” High
Version (32MB)
1
36 37
72
1” High
Version (16MB)
1
50H7994
SA14-4340-00
Revised 3/96
36 37
72
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 22
IBM11D8360B IBM11D4360B
IBM11E8360B IBM11E4360B
4M/8M x 36 DRAM Module
Pin Description
RAS0, RAS2
RAS0 - RAS3
CAS0 - CAS3
WE
A0 - A9
DQ0-7, 9-16,
18-25, 27-34
Row Address Strobe (4MB)
Row Address Strobe (8MB)
Column Address Strobe
Read/write Input
Address Inputs
Data Input/output
Pinout
Pin# Name Pin# Name Pin# Name
1
2
3
4
5
6
7
8
9
10
11
12
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
13
14
15
16
17
18
19
20
21
22
23
24
A1
A2
A3
A4
A5
A6
NC
DQ4
DQ22
DQ5
DQ23
DQ6
25
26
27
28
29
30
31
32
33
34
35
36
DQ24
DQ7
DQ25
A7
NC
V
CC
A8
A9
RAS3*
RAS2
PQ26
PQ8
Pin# Name
37
38
39
40
41
42
43
44
45
46
47
48
PQ17
PQ35
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1*
NC
WE
NC
Pin# Name Pin# Name
49
50
51
52
53
54
55
56
57
58
59
60
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
61
62
63
64
65
66
67
68
69
70
71
72
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
PQ8, 17, 26, 35 Parity Input/output
V
CC
V
SS
NC
PD1 - PD4
Power (+5V)
Ground
No Connect
Presence Detects
1. DQ numbering is compatible with non-parity (x32) version.
2. * RAS1 and RAS3 are “NC” on 16MB SIMM.
Ordering Information
Part Number
IBM11D4360BB-60
IBM11D4360BB-70
IBM11E4360BB-60
IBM11E4360BB-70
IBM11D8360BC-60
IBM11D8360BC-70
IBM11E8360BC-60
IBM11E8360BC-70
IBM11D8360BD-60
IBM11D8360BD-70
IBM11E8360BD-60
IBM11E8360BD-70
Organization
4M x 36
4M x 36
4M x 36
4M x 36
8M x 36
8M x 36
8M x 36
8M x 36
8M x 36
8M x 36
8M x 36
8M x 36
Speed
60ns
70ns
60ns
70ns
60ns
70ns
60ns
70ns
60ns
70ns
60ns
70ns
Leads
Sn/Pb
Sn/Pb
Au
Au
Sn/Pb
Sn/Pb
Au
Au
Sn/Pb
Sn/Pb
Au
Au
Dimensions
4.25” x 1” x .360”
4.25” x 1” x .360”
4.25” x 1” x .360”
4.25” x 1” x .360”
5.00” x 1” x .360” (Winged Version)
5.00” x 1” x .360” (Winged Version)
5.00” x 1” x .360” (Winged Version)
5.00” x 1” x .360” (Winged Version)
4.25” x 1.25” x .360”
4.25” x 1.25” x .360”
4.25” x 1.25” x .360”
4.25” x 1.25” x .360”
Notes
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7994
SA14-4340-00
Revised 3/96
Page 2 of 22
IBM11D4360B IBM11D8360B
IBM11E4360B IBM11E8360B
4M/8M x 36 DRAM Module
Block Diagrams
Applies to both 16MB and 32MB SIMMs
DQ0
DQ1-4
DQ1-4
WE
CAS
U2
RAS
OE
A0-A10
PQ8
D
Q
DQ9
DQ1-4
WE
CAS
U5
RAS
OE
A0-A10
DQ1-4
WE
CAS
U6
RAS
OE
A0-A10
PQ17
D
Q
WE
CAS0
RAS0
WE
CAS
U1
RAS
OE
A0-A10
WE
CAS
U17
RAS
A0-A10
WE
CAS
U18
RAS
A0-A10
CAS1
11
11
11
11
11
11
DQ18
DQ1-4
DQ1-4
WE
CAS
U4
RAS
OE
A0-A10
PQ26
D
Q
DQ1-4
WE
CAS
U7
RAS
OE
A0-A10
DQ1-4
WE
CAS
U8
RAS
OE
A0-A10
PQ35
D
Q
CAS2
RAS2
WE
CAS
U3
RAS
OE
A0-A10
WE
CAS
U19
RAS
A0-A10
WE
CAS
U20
RAS
A0-A10
CAS3
A0-A10
11
11
11
11
11
11
Applies to 32MB SIMM only
DQ0
DQ1-4
DQ1-4
WE
CAS
U16
RAS
OE
A0-A10
PQ8
D
Q
DQ9
DQ1-4
WE
CAS
U11
RAS
OE
A0-A10
DQ1-4
WE
CAS
U12
RAS
OE
A0-A10
PQ17
D
Q
WE
CAS0
RAS1
WE
CAS
U15
RAS
OE
A0-A10
WE
CAS
U21
RAS
A0-A10
WE
CAS
U22
RAS
A0-A10
CAS1
11
11
11
11
11
11
DQ18
DQ1-4
DQ1-4
WE
CAS
U14
RAS
OE
A0-A10
PQ26
D
Q
DQ1-4
WE
CAS
U9
RAS
OE
A0-A10
DQ1-4
WE
CAS
U10
RAS
OE
A0-A10
PQ35
D
Q
CAS2
RAS3
WE
CAS
U13
RAS
OE
A0-A10
WE
CAS
U23
RAS
A0-A10
WE
CAS
U24
RAS
A0-A10
CAS3
11
11
11
11
11
11
A0-A10
50H7994
SA14-4340-00
Revised 3/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 3 of 22
IBM11D8360B IBM11D4360B
IBM11E8360B IBM11E4360B
4M/8M x 36 DRAM Module
Truth Table
Function
Standby
Read
Early-Write
Fast Page Mode - Read:
1st Cycle
Subsequent Cycles
Fast Page Mode - Write:
1st Cycle
Subsequent Cycles
RAS-Only Refresh
CAS-Before-RAS Refresh
Read
Hidden Refresh
Write
L→H→L
L
L
Row
Col
Data In
RAS
H
L
L
L
L
L
L
L
H→L
L→H→L
CAS
X
L
L
H→L
H→L
H→L
H→L
H
L
L
WE
X
H
L
H
H
L
L
X
H
H
Row
Address
X
Row
Row
Row
N/A
Row
N/A
Row
X
Row
Column
Address
X
Col
Col
Col
Col
Col
Col
N/A
X
Col
All DQ, PQ bits
High Impedance
Valid Data Out
Valid Data In
Valid Data Out
Valid Data Out
Valid Data In
Valid Data In
High Impedance
High Impedance
Data Out
Presence Detect
4M x 36
Pin
-60
PD1
PD2
PD3
PD4
1.
NC= OPEN
,
V
ss =
GND
V
SS
NC
NC
NC
-70
V
SS
NC
V
SS
NC
-60
NC
V
SS
NC
NC
-70
NC
V
SS
V
SS
NC
8M x 36
Absolute Maximum Ratings
Symbol
V
CC
V
IN
V
OUT
T
OPR
T
STG
P
D
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Rating
-1.0 to +6.0
-1.0 to +6.0
-1.0 to +6.0
0 to +70
-55 to +125
6.2 (16MB) 12.3(32MB)
Units
V
V
V
°C
°C
W
Notes
1
1
1
1
1
1, 2
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
2. Maximum power occurs when all banks are active (refresh cycle).
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7994
SA14-4340-00
Revised 3/96
Page 4 of 22
IBM11D4360B IBM11D8360B
IBM11E4360B IBM11E8360B
4M/8M x 36 DRAM Module
Absolute Maximum Ratings
Symbol
I
OUT
Parameter
Short Circuit Output Current
Rating
50
Units
mA
Notes
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
2. Maximum power occurs when all banks are active (refresh cycle).
50H7994
SA14-4340-00
Revised 3/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 22
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