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2SC3250

Description
Bipolar Transistors;NPN;0.1A;300V;TO-220
CategoryDiscrete semiconductor   
File Size184KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC3250 Overview

Bipolar Transistors;NPN;0.1A;300V;TO-220

2SC3250 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
2SC3250
DESCRIPTION
·Low
Collector Saturation Voltage
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 300V (Min)
·Good
Linearity of h
FE
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
300
300
7
0.1
0.2
15
150
-55~150
UNIT
V
V
V
A
A
W
isc Website
www.iscsemi.cn
1
isc & iscsemi
is registered trademark

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