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BAS3010B03WE6327XT

Description
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size61KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAS3010B03WE6327XT Overview

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

BAS3010B03WE6327XT Parametric

Parameter NameAttribute value
MakerInfineon
package instructionROHS COMPLIANT PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
BAS3010B...
Medium Power AF Schottky Diode
Forward current: 1 A
Reverse voltage: 30 V
Low forward voltage, low reverse current
For high efficiency DC/DC conversion,
fast switching, protection and
clamping applications
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAS3010B-03W

Type
BAS3010B-03W
Parameter
Diode reverse voltage
2)
Forward current
2)
Package
SOD323
Configuration
single
Symbol
V
R
I
F
Value
30
1
1
3.5
10
150
-65 ... 125
-65 ... 150
Marking
2/ red
Unit
V
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Average rectified forward current (50/60Hz, sinus)
I
FAV
Repetitive peak forward current
I
FRM
(t
p
1 ms,
D
0.5)
Non-repetitive peak surge forward current
(t
10 ms)
Junction temperature
Operating temperature range
Storage temperature
1
Pb-containing
2
I
FSM
T
j
T
op
T
stg
°C
package may be available upon special request
For
T
A
> 25°C the derating of
V
R
and
I
F
has to be considered. Please refer to the attached curves.
1
2007-04-19

BAS3010B03WE6327XT Related Products

BAS3010B03WE6327XT BAS3010B-03W BAS3010B03WE6327HTSA1 BAS3010B-03W-E6327 BAS3010B-03W-E6433
Description Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2 1 A, 30 V, SILICON, SIGNAL DIODE DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 1A Forward voltage drop (Vf): 550mV @ 1A 30V 1A VF=550mV@1A Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM),
Maker Infineon Infineon Infineon Infineon Infineon
Reach Compliance Code compli compli compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Configuration SINGLE SINGLE - SINGLE SINGLE
Number of components 1 1 - 1 1
Maximum operating temperature 125 °C 150 °C - 125 °C 125 °C
Maximum output current 1 A 1 A - 1 A 1 A
Maximum repetitive peak reverse voltage 30 V 30 V - 30 V 30 V
surface mount YES YES - YES YES
technology SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY
Is it Rohs certified? - conform to conform to conform to -
Maximum forward voltage (VF) - 0.28 V - 0.28 V 0.28 V
Humidity sensitivity level - 1 1 1 -
Maximum non-repetitive peak forward current - 10 A - 10 A 10 A
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