BD830-10 datasheet, PDF - EEWORLD Datasheet

BD830-10: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size203KB，5 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BD830-10 Overview

Transistor

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Configuration	Single
Minimum DC current gain (hFE)	25
Maximum operating temperature	140 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	8 W
surface mount	NO
Nominal transition frequency (fT)	50 MHz

	BD830-10	BD826-6	BD826	BD830-6	BD828	BD828-10	BD828-6
Description	Transistor	Transistor	Transistor,	Transistor	Transistor,	Transistor	Transistor
Maker	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant	compliant
Maximum collector current (IC)	1.5 A	1.5 A	1 A	1.5 A	1 A	1.5 A	1.5 A
Configuration	Single	Single	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	25	25	40	25	40	63	40
Maximum operating temperature	140 °C	140 °C	150 °C	140 °C	150 °C	140 °C	140 °C
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	8 W	8 W	2 W	8 W	2 W	8 W	8 W
surface mount	NO	NO	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	50 MHz	50 MHz	75 MHz	50 MHz	75 MHz	50 MHz	50 MHz

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