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DD241S12K

Description
Rectifier Diode, 1 Phase, 2 Element, 261A, 1200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size180KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

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DD241S12K Overview

Rectifier Diode, 1 Phase, 2 Element, 261A, 1200V V(RRM), Silicon,

DD241S12K Parametric

Parameter NameAttribute value
MakerInfineon
package instructionR-XUFM-X3
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.55 V
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current7500 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current261 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current200000 µA
Reverse test voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
European Power-
Semiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
DD 241 S
35
28,5
6
115
80
9
18
M8
92
18
AK
K
A
March 1998
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