技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD400S33K2C
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大损耗功率
Maximumpowerdissipation
最小开通时间
Minimumturn-ontime
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
vj
= -25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
T
vj
= 125°C
V
RRM
I
F
I
FRM
I²t
3300
3300
400
800
55,5
800
10,0
min.
I
F
= 400 A, V
GE
= 0 V
I
F
= 400 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
typ.
2,80
2,80
550
650
235
440
245
515
12,0
125
max.
3,50
3,50
V
V
A
A
µC
µC
mJ
mJ
V
A
A
kA²s
kW
µs
P
RQM
t
on min
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
51,0 K/kW
K/kW
°C
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:3.2
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD400S33K2C
模块/Module
绝缘测试电压
Isolationtestvoltage
局部放电停止电压
Partialdischargeextinctionvoltage
DC稳定性
DCstability
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
外壳－散热器热阻
Thermalresistance,casetoheatsink
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
RMS, f = 50 Hz, t = 1 min.
RMS, f = 50 Hz, Q
PD
≤
10 pC (acc. to IEC 1287)
T
vj
= 25°C, 100 fit
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
每个模块/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
C
=25°C,每个开关/perswitch
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
V
ISOL
V
ISOL
V
CE D
CTI
min.
R
thCH
L
sCE
R
CC'+EE'
T
stg
M
-40
4,25
1,8
M
8,0
G
-
1000
10
Nm
g
6,0
2,6
1800
AlSiC
AlN
32,2
32,2
19,1
19,1
> 400
typ.
6,00
25
0,39
-
-
125
5,75
2,1
max.
K/kW
nH
mΩ
°C
Nm
Nm
kV
kV
V
mm
mm
重量
Weight
Dynamische Daten gelten in Verbindung mit FF400R33KF2C Modul.
Dynamic data valid in conjunction with FF400R33KF2C module.
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:3.2
2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD400S33K2C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
E
rec
=f(I
F
)
R
Gon
=Ω,V
CE
=1800V
800
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
I
F
=f(V
F
)
800
700
600
500
400
300
200
100
0
T
vj
= 25°C
T
vj
= 125°C
E
rec
, T
vj
= 125°C
700
600
500
E [mJ]
400
300
200
100
0
I
F
[A]
0,0
0,5
1,0
1,5
2,0
V
F
[V]
2,5
3,0
3,5
4,0
0
100
200
300
400
I
F
[A]
500
600
700
800
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
E
rec
=f(R
G
)
I
F
=400A,V
CE
=1800V
800
E
rec
, T
vj
= 125°C
700
600
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
Z
thJC
=f(t)
100
Z
thJC
: Diode
10
500
400
300
1
200
100
0
0,1
0,001
i:
1
2
3
4
r
i
[K/kW]: 22,95 12,75 3,06 12,24
τ
i
[s]:
0,03 0,1
0,3 1
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
R
G
[Ω]
Z
thJC
[K/kW]
E [mJ]
0,01
0,1
t [s]
1
10
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:3.2
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD400S33K2C
安全工½区二极管,逆变器(SOA)
safeoperationareaDiode,Inverter(SOA)
I
R
=f(V
R
)
T
vj
=125°C
1000
I
R
, Modul
900
800
700
600
I
R
[A]
500
400
300
200
100
0
0
500
1000
1500 2000
V
R
[V]
2500
3000
3500
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:3.2
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
DD400S33K2C
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:3.2
5
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