PD - 95097A
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Lead-Free
Benefits
l
l
l
IRFR3706PbF
IRFU3706PbF
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
9.0mΩ
I
D
75A
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3706
I-Pak
IRFU3706
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 12
75
53
280
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
R
θJC
R
θJA
R
θJA
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.7
50
110
Units
°C/W
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes
through
are on page 10
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1
12/14/04
IRFR/U3706PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.021
6.9
8.1
11.5
–––
–––
–––
–––
–––
Max. Units
––– V
––– V/°C
9.0
11 mΩ
23
2.0
V
20
µA
100
200
nA
-200
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 2.8V, I
D
= 7.5A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
Rg
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
23
8.0
5.5
16
1.8
6.8
87
17
4.8
2410
1070
140
Max. Units
Conditions
–––
S
V
DS
= 16V, I
D
= 57A
35
I
D
= 28A
12
nC
V
DS
= 10V
8.3
V
GS
= 4.5V
24
V
GS
= 0V, V
DS
= 10V
–––
Ω
–––
V
DD
= 10V
ns
–––
I
D
= 28A
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
pF
V
DS
= 10V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
220
28
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.88
0.82
45
65
49
78
75
280
1.3
–––
68
98
74
120
V
ns
nC
ns
nC
A
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
T
J
= 125°C, I
S
= 36A, V
GS
= 0V
T
J
= 25°C, I
F
= 36A, V
R
=20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 36A, V
R
=20V
di/dt = 100A/µs
2
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IRFR/U3706PbF
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
100
2.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
2.5V
10
0.1
10
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 71A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
100
1.5
1.0
0.5
10
2.5
V DS = 15V
20µs PULSE WIDTH
3.5
4.5
5.5
6.5
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U3706PbF
100000
10
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
28A
V
DS
= 16V
V
DS
= 10V
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
4
100
Crss
2
10
1
10
100
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
T
J
= 175
°
C
10
I
D
, Drain Current (A)
100
100
100us
1ms
10
10ms
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
1
T
C
= 25 ° C
T
J
= 175° C
Single Pulse
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U3706PbF
80
LIMITED BY PACKAGE
V
DS
V
GS
R
D
I
D
, Drain Current (A)
60
R
G
4.5V
D.U.T.
+
-
V
DD
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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