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PTAC260302FCV1

Description
RF Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size231KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

PTAC260302FCV1 Overview

RF Power Field-Effect Transistor,

PTAC260302FCV1 Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompli
ECCN codeEAR99
PTAC260302FC
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
30 W, 28 V, 2620 – 2690 MHz
Description
The PTAC260302FC is a 30-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to
2690 MHz frequency band. This device integrates a 10-W (main)
and a 20-W (peak) transistor, making it ideal for asymmetric Doherty
amplifier designs. Features include input matching, high gain and
thermally-enhanced package with earless flange. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTAC260302FC
Package H-37248H-4
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 85 mA,
ƒ = 2620, 2655, 2690 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
2620 MHz
2655 MHz
2690 MHz
Features
60
50
40
30
Asymmetric design
Broadband internal matching
Typical CW performance, 2690 MHz, 28 V
(Doherty configuration, combined output)
- Output power @ P
3dB
= 30 W
- Efficiency = 54%
- Gain = 13 dB
Typical single-carrier WCDMA performance,
2690 MHz, 28 V, 10 dB PAR
- Output power = 37.5 dBm avg
- Gain = 15.5 dB
- Efficiency = 45%
Capable of handling 10:1 VSWR @ 32 V, 30 W
(CW) output power
Integrated ESD protection
Pb-free and RoHS compliant
-10
ACP Up and ACP Low (dBc)
Drain Efficiency(%)
-20
-30
-40
-50
-60
28
30
Efficiency
ACP Up
ACP Low
c260302f c_gr1
20
10
32
34
36
38
40
42
44
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Measurements
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, I
DQ
= 85 mA, V
GS1
= 1.1 V, P
OUT
= 5.6 W avg, ƒ = 2690 MHz,
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
14.5
42
Typ
15.5
45
–27
Max
–25
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 9
Rev. 03, 2013-03-07
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