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SPD02N80C3AT

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size375KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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SPD02N80C3AT Overview

Power Field-Effect Transistor

SPD02N80C3AT Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompli
ECCN codeEAR99
SPD02N80C3
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
Product Summary
V
DS
R
DS(on)max
@ T
j
= 25°C
Q
g,typ
800
2.7
12
V
W
nC
• Pb-free lead plating; RoHS compliant
; available in Halogen free mold compound
a)
• Ultra low gate charge
• Ultra low effective capacitances
PG-TO252-3
CoolMOS
TM
800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
xsx
Type
SPD02N80C3
Package
PG-TO252-3
Marking
02N80C3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
a)
Value
2
1.2
6
90
0.05
2
50
±20
±30
42
-55 ... 150
Unit
A
T
C
=25 °C
I
D
=1 A,
V
DD
=50 V
I
D
=2 A,
V
DD
=50 V
mJ
A
V/ns
V
P
tot
T
j
,
T
stg
T
C
=25 °C
W
°C
non-
Halogen free (OPN: SPD02N80C3BT); Halogen free (OPN: SPD02N80C3AT)
Rev.
2.92
2.91
page 1
2013-07-31
2011-09-28

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Maker Infineon Infineon Infineon
Reach Compliance Code compli compliant compliant
ECCN code EAR99 EAR99 -
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