AS7C331MNTD18A-166TQIN datasheet, PDF

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AS7C331MNTD18A-166TQIN: DescriptionZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100; Categorystorage storage; File Size424KB，18 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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AS7C331MNTD18A-166TQIN Overview

ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100

AS7C331MNTD18A-166TQIN Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	compli
ECCN code	3A991.B.2.A
Maximum access time	3.4 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PQFP-G100
JESD-609 code	e3
length	20 mm
memory density	18874368 bi
Memory IC Type	ZBT SRAM
memory width	18
Number of functions	1
Number of terminals	100
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX18
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	245
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	14 mm

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December 2004

AS7C331MNTD18A

3.3V 1M x 18 Pipelined SRAM with NTD

Features

•

Organization: 1,048,576 words × 18 bits

NTD

™

architecture for efficient bus operation

Fast clock speeds to 166 MHz

Fast clock to data access: 3.4/3.8 ns

Fast OE access time: 3.4/3.8 ns

Fully synchronous operation

Asynchronous output enable control

Available in 100-pin TQFP package

•

Individual byte write and global write

Clock enable for operation hold

Multiple chip enables for easy expansion

3.3V core power supply

2.5V or 3.3V I/O operation with separate V

DDQ

Self-timed write cycles

Interleaved or linear burst modes

Snooze mode for standby operation

Logic block diagram

A[19:0]

Address

burst logic

CLK

CE0

CE1

CE2

R/W

BWa

BWb

ADV / LD

LBO

CLK

Write delay

addr. registers

CLK

Control

logic

CLK

Write Buffer

1M x 18

SRAM

array

DQ [a,b]

Data

input

CLK

CEN

CLK

Output

DQ [a,b]

Selection guide

-166

Minimum cycle time

Maximum clock frequency

Maximum clock access time

Maximum operating current

Maximum standby current

Maximum CMOS standby current (DC)

166

3.4

290

-133

7.5

133

3.8

270

Units

MHz

12/24/04, v 2.7

Alliance Semiconductor

P. 1 of 18

AS7C331MNTD18A-166TQIN Related Products

	AS7C331MNTD18A-166TQIN	AS7C331MNTD18A-133TQIN	AS7C331MNTD18A-133TQC	AS7C331MNTD18A-133TQCN	AS7C331MNTD18A-166TQC	AS7C331MNTD18A-166TQCN	AS7C331MNTD18A-166TQI	AS7C331MNTD18A-133TQI
Description	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
Is it lead-free?	Lead free	Lead free	Contains lead	Lead free	Contains lead	Lead free	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	incompatible	conform to	incompatible	conform to	incompatible	incompatible
Parts packaging code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
package instruction	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,
Contacts	100	100	100	100	100	100	100	100
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	3.4 ns	3.8 ns	3.8 ns	3.8 ns	3.4 ns	3.4 ns	3.4 ns	3.8 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e3	e3	e0	e3	e0	e3	e0	e0
length	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
memory density	18874368 bi	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bi
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	18	18	18	18	18	18	18	18
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	100	100	100	100	100	100	100	100
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	70 °C	70 °C	70 °C	70 °C	85 °C	85 °C
organize	1MX18	1MX18	1MX18	1MX18	1MX18	1MX18	1MX18	1MX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	245	245	NOT SPECIFIED	245	NOT SPECIFIED	245	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	MATTE TIN	MATTE TIN	TIN LEAD	MATTE TIN	TIN LEAD	MATTE TIN	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	30	30	NOT SPECIFIED	30	NOT SPECIFIED	30	NOT SPECIFIED	NOT SPECIFIED
width	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
Maker	Integrated Silicon Solution ( ISSI )	-	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )

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