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35JB10L

Description
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, POWER MODULE-4
CategoryDiscrete semiconductor    diode   
File Size118KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

35JB10L Overview

Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, POWER MODULE-4

35JB10L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeMODULE
package instructionR-PUFM-D4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL APPROVED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.14 V
JESD-30 codeR-PUFM-D4
JESD-609 codee0
Maximum non-repetitive peak forward current500 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current35 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED

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Index Files: 935  365  2293  2757  359  19  8  47  56  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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