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IRFG9113

Description
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size423KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRFG9113 Overview

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

IRFG9113 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum drain current (Abs) (ID)0.65 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.5 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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