Bulletin I25186 rev. A 05/94
ST303C..L SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capibility
Low thermal impedance
High speed performance
Hockey Puk Version
515A
TypicalApplications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range (*)
T
J
ST303C..L
515
55
995
25
7950
8320
316
289
400 to 1200
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
(*) t
q
= 10 to 20µs for 400 to 800V devices
t
q
= 15 to 30µs for 1000 to 1200V devices
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1
ST303C..L Series
Bulletin I25186 rev. A 05/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
ST303C..L
08
10
12
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
400
800
1000
1200
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
50
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
1130
1010
680
230
50
V
DRM
50
40
I
TM
180
o
el
950
820
530
140
50
50
55
1800
1850
1560
690
50
V
DRM
-
40
I
TM
100µs
1540
1570
1300
510
50
-
55
5660
2830
1490
540
50
V
DRM
-
40
I
TM
Units
4990
2420
1220
390
50
-
55
A
V
A/µs
°C
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST303C..L
515 (190)
55 (85)
995
7950
8320
6690
7000
Units
A
°C
Conditions
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
t
Maximum I
2
t for fusing
316
289
224
204
KA
2
s
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
3160
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
2
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ST303C..L Series
Bulletin I25186 rev. A 05/94
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
ST303C..L Units
2.16
1.44
1.48
0.57
mΩ
0.56
600
1000
mA
V
Conditions
I
TM
= 1255A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
Low level value of forward
slope resistance
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical atching current
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST303C..L Units
1000
0.83
Min
10
q
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
A/µs
Typical delay time
Max. turn-off time (*)
q
t
q
Max
30
µs
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST303C..L
500
50
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST303C..L Units
60
10
10
20
V
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
T
J
= T
J
max, t
p
≤
5ms
5
200
3
20
0.25
mA
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST303C..L Series
Bulletin I25186 rev. A 05/94
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST303C..L
-40 to 125
-40 to 150
0.11
0.05
0.011
0.005
9800
(1000)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
250
TO - 200AC (B-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
Single Side Double Side
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
Single Side Double Side
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
Units
Conditions
T
J
= T
J
max.
K/W
Ordering Information Table
Device Code
ST
1
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
30
2
3
3
C
4
12
5
L
6
H
7
K
8
1
9
10
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- L = Puk Case TO-200AC (B-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
dv/dt - t
q
combinations available
t
q
(µs)
dv/dt (V/µs)
20
10
CN
12
CM
up to 800V 15
CL
20
CK
CL
CP
CK
CJ
--
50
DN
DM
DL
DK
--
DP
DK
DJ
DH
100
EN
EM
EL
EK
--
--
EK
EJ
EH
200
FN *
FM
FL *
FK *
400
HN
HM
HL
HK
15
18
only for
20
1000/1200V 25
30
t
q
(µs)
--
--
--
--
FK *
HK
FJ *
HJ
FH HH
*
Standard part number.
All other types available only on request.
4
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ST303C..L Series
Bulletin I25186 rev. A 05/94
Outline Table
0.7 (0.03) MIN.
27 (1.06) MAX.
34 (1.34) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20°± 5°
58.5 (2.3) DIA. MAX.
4.7 (0.18)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
0
50
100
150
200
250
300
350
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Conduction Angle
130
120
110
100
90
80
70
60
50
40
30
20
0
100
30°
ST303C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
ST303C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
Conduction Period
30°
60°
90°
120°
180°
60°
90°
120°
180°
200
300
400
DC
500
600
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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Embedded System
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