HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Typical Applications
The hmC998 is ideal for:
Features
high p1dB output power: +31 dBm
high psat output power: +33 dBm
high Gain: 12 dB
high output ip3: +41 dBm
supply Voltage: Vdd = +10V to +15V @ 500 mA
50 ohm matched input/output
Die size: 2.99 x 1.84 x 0.1 mm
Amplifiers - lineAr & power - Chip
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
General Description
The hmC998 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 22 Ghz. The amplifier provides 12 dB of gain,
+41 dBm output ip3 and +31 dBm of output power at
1 dB gain compression while requiring 500 mA from
a +15V supply. This versatile PA exhibits a positive
gain slope from 1 to 18 Ghz making it ideal for ew,
eCm, radar and test equipment applications. The
hmC998 amplifier i/os are internally matched to
50 ohms facilitating integration into mutli-chip-
modules (mCms). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 mA*
parameter
frequency range
Gain
Gain flatness
Gain Variation over Temperature
input return loss
output return loss
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
supply Current
(idd) (Vdd= 15V, Vgg1= -0.7V Typ.)
29
9.5
min.
Typ.
0.1 - 2
11.5
±0.1
0.006
-20
-7
31
33
41
10
500
29
10.5
max.
min.
Typ.
2 - 18
12.5
±0.7
0.11
-20
-20
31.5
33.5
41
4
500
27
10.5
max.
min.
Typ.
18 - 22
12.5
±0.6
0.016
-15
-20
30
33
40
5
500
max.
Units
Ghz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd = 500mA typical.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Gain & Return Loss
20
Gain vs. Temperature
18
16
S21
S11
S22
10
RESPONSE (dB)
14
GAIN (dB)
12
10
0
-10
-20
8
6
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
+25C
+85C
-55C
-30
FREQUENCY (GHz)
16
18
20
22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-55C
Output Return Loss vs. Temperature
0
+25C
+85C
-55C
RETURN LOSS (dB)
-10
-10
RESPONSE (dB)
-20
-20
-30
-30
-40
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
-40
0
4
8
12
16
20
24
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
20
10
0
-10
-20
-30
-40
-50
0.0001
Noise Figure vs. Frequency
10
9
8
NOISE FIGURE (dB)
+25C
+85C
-55C
RESPONSE (dB)
S21
S11
S22
7
6
5
4
3
2
1
0.001
0.01
0.1
1
10
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - lineAr & power - Chip
2
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
P1dB vs. Temperature
36
Psat vs. Temperature
36
+25C
+85C
-55C
Amplifiers - lineAr & power - Chip
34
32
30
28
26
24
0
2
4
6
8
10
12
14
34
32
30
28
26
24
+25C
+85C
-55C
P1dB (dBm)
16
18
20
22
Psat (dBm)
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Vdd
36
34
32
30
28
26
24
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
10V
12V
14V
15V
Psat vs. Vdd
36
34
32
30
28
26
24
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
10V
12V
14V
15V
P1dB (dBm)
Output IP3 vs. Temperature
@ Pout = 18 dBm Tone
50
Output IP3 vs. Vdd
@ Pout = 18 dBm Tone
50
45
Psat (dBm)
IP3 (dBm)
+25C
+85C
-55C
45
IP3 (dBm)
40
40
35
35
10V
12V
14V
15V
30
30
25
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
25
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Output IP3 vs. Output Power @ 11 GHz
50
Pout (dBm), GAIN (dB), PAE (%)
400 mA
450 mA
500 mA
Power Compression @ 4 GHz
35
30
25
20
15
10
5
0
45
IP3 (dBm)
40
35
30
25
10
12
14
16
18
20
22
OUTPUT POWER (dBm)
0
5
10
15
20
25
INPUT POWER (dBm)
Power Compression @ 10 GHz
35
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
0
5
10
15
20
25
INPUT POWER (dBm)
Pout
Gain
PAE
Power Compression @ 20 GHz
35
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
0
5
10
15
20
25
INPUT POWER (dBm)
Pout
Gain
PAE
Power Dissipation
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
INPUT POWER (dBm)
Second Harmonics vs.
Temperature @ Pout = 18 dBm
70
SECOND HARMONIC (dBc)
60
50
40
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
+25C
+85C
-55C
POWER DISSIPATION (W)
Max Pdis @ 85C
2 GHz
10 GHz
20 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - lineAr & power - Chip
4
Pout
Gain
PAE
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Second Harmonics vs.
Vdd @ Pout = 18 dBm
70
Second Harmonics vs. Pout
70
SECOND HARMONIC (dBc)
60
50
40
30
20
10
0
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
Amplifiers - lineAr & power - Chip
SECOND HARMONIC (dBc)
60
50
40
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
+12V
+14V
+15V
0
4
8
12
16
20
24
FREQUENCY(GHz)
Reverse Isolation vs Temperature
0
-10
-20
ISOLATION (dB)
-30
-40
-50
-60
-70
-80
0
4
8
12
16
20
24
FREQUENCY (GHz)
+25C
+85C
-55C
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
rf input power (rfin)
Channel Temperature
Continuous pdiss (T= 85 °C)
(derate 129 mW/°C above 85
°C)
Thermal resistance
(channel to die bottom)
output power into Vswr >7:1
storage Temperature
operating Temperature
+17 Vdc
-3 to 0 Vdc
Vgg2 = (Vdd - 6.5V) to (Vdd-4.5V)
+27 dBm
150 °C
8.4 w
Typical Supply Current vs. Vdd
Vdd (V)
+12
+14
+15
idd (mA)
500
500
500
Vgg1 adjust to achieve idd = 500 mA
7.73 °C/w
+32 dBm
-65 to 150°C
-55 to 85 °C
eleCTrosTATiC sensiTiVe DeViCe
oBserVe hAnDlinG preCAUTions
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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