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BC818

Description
Bipolar transistor, 25V, 0.5A, 170MHZ, -55-150℃
CategoryDiscrete semiconductor    Bipolar transistor   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

BC818 Overview

Bipolar transistor, 25V, 0.5A, 170MHZ, -55-150℃

BC818 Parametric

Parameter NameAttribute value
polarityNPN
Collector-emitter breakdown voltage25
Collector Current - Continuous0.5
DC current gain - Min100
DC current gain - Max630
Transition frequency170
PackageSOT-23
Storage Temperature Range-55-150
classTransistors
BC818
NPN General Purpose Amplifier
FEATURES
For general AF application.
Complementary PNP type available
BC808.
High collector current, high current gain.
Low collector-emitter saturation voltage.
D
G
H
J
K
B
E
A
SOT-23
Dim
A
B
C
D
E
G
H
J
K
Min
2.70
1.10
Max
3.10
1.50
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
APPLICATIONS
General purpose medium power amplifier.
C
0.1 Typical
All Dimensions in mm
ORDERING INFORMATION
Type No.
BC818-16
BC818-25
BC818-40
Marking
6E
6F
6G
Package Code
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
30
25
5
500
330
-65 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
818-16
818-25
818-40
818-16
818-25
818-40
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=10μA I
E
=0
I
C
=10mA I
B
=0
I
E
=10μA I
C
=0
V
CB
=25V I
E
=0
V
EB
=4V I
C
=0
100
160
250
60
100
170
0.7
1.2
170
V
V
MHz
MIN
30
25
5
0.1
0.1
250
400
630
MAX
UNIT
V
V
V
μA
μA
h
FE
V
CE
=1V I
C
=100mA
DC current gain
h
FE
V
CE
=1V I
C
=300mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
I
C
=500mA I
B
=50mA
I
C
=500mA I
B
=50mA
V
CE
=5V,I
C
=50mA
f=100MHz
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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