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BC856W

Description
Bipolar transistor, 65V, 0.1A, 100MHZ, -55-150℃
CategoryDiscrete semiconductor    Bipolar transistor   
File Size939KB,5 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BC856W Overview

Bipolar transistor, 65V, 0.1A, 100MHZ, -55-150℃

BC856W Parametric

Parameter NameAttribute value
polarityNPN
Collector-emitter breakdown voltage65
Collector Current - Continuous0.1
DC current gain - Min125
DC current gain - Max475
Transition frequency100
PackageSOT-323
Storage Temperature Range-55-150
classTransistors
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
STO-323 Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
SOT-323
Features
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
MAXIMUM RATINGS (T
A
=25
unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
V
CBO
BC856W
BC857W
BC858W
Collector-Emitter Voltage
V
CEO
BC856W
BC857W
BC858W
V
EBO
I
C
P
C*
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-65
-45
-30
-5
-0.1
150
150
-65-150
V
A
mW
V
-80
-50
-30
V
Dimensions in inches and (millimeters)
Value
Units
DEVICE MARKING
BC856AW=3A; BC856BW=3B;
BC857AW=3E;BC857BW=3F;BC857CW=3G;
BC858AW=3J; BC858BW=3K; BC858CW=3L
Revision:20170701-P1
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mail:lge@lgesemi.com

BC856W Related Products

BC856W BC857W BC858W
Description Bipolar transistor, 65V, 0.1A, 100MHZ, -55-150℃ Bipolar transistor, 45V, 0.1A, 100MHZ, -55-150℃ Bipolar transistor, 30V, 0.1A, 100MHZ, -55-150℃
polarity NPN PNP PNP
Collector-emitter breakdown voltage 65 45 30
Collector Current - Continuous 0.1 0.1 0.1
DC current gain - Max 475 800 800
Transition frequency 100 100 100
Package SOT-323 SOT-323 SOT-323
Storage Temperature Range -55-150 -55-150 -55-150
class Transistors Transistors Transistors
DC current gain - Mi - 125 125

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