BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
STO-323 Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
SOT-323
Features
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
V
CBO
BC856W
BC857W
BC858W
Collector-Emitter Voltage
V
CEO
BC856W
BC857W
BC858W
V
EBO
I
C
P
C*
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-65
-45
-30
-5
-0.1
150
150
-65-150
V
A
mW
℃
℃
V
-80
-50
-30
V
Dimensions in inches and (millimeters)
Value
Units
DEVICE MARKING
BC856AW=3A; BC856BW=3B;
BC857AW=3E;BC857BW=3F;BC857CW=3G;
BC858AW=3J; BC858BW=3K; BC858CW=3L
Revision:20170701-P1
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t
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:
//
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.c
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mail:lge@lgesemi.com
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
STO-323 Transistor(PNP)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC856W
BC857W
BC858W
Collector-emitter breakdown voltage
BC856W
BC857W
BC858W
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
BC856AW, 857AW,858AW
BC856BW, 857BW,858BW
BC857CW,BC858CW
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=-100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
h
FE
V
CE
= -5V, I
C
= -2mA
V
EBO
I
CBO
I
E
= -1μA, I
C
=0
V
CB
= -30 V , I
E
=0
125
220
420
V
CEO
I
C
= -10mA, I
B
=0
V
CBO
I
C
= -10μA, I
E
=0
Symbol
Test
conditions
MIN
-80
-50
-30
-65
-45
-30
-5
-15
250
475
800
-0.65
-1.1
V
V
V
nA
V
V
MAX
UNIT
Transition frequency
f
T
100
MHz
Collector capacitance
C
ob
V
CB
=-10V, f=1MHz
4.5
pF
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com