BAS70-05T datasheet, PDF - EEWORLD Datasheet

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BAS70-05T: DescriptionSchottky diodes; CategoryDiscrete semiconductor; File Size316KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BAS70-05T Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model:BAS70-05T

product features:

Low Turn-on Voltage

Fast Switching

Product parameters:

Pd dissipated power: 150mW

Io rectified current: 70mA

VR reverse working voltage: 70V

VF forward buck: 1V

IR reverse current: 0.1uA

Trr forward recovery time: 5ns

Package: SOT-523

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Diodes

BAS70T/-04T/-05T/06T

FEATURES

Low Turn-on

Voltage

Fast

Switching

SCHOTTKY

BARRIER

DIODE

SOT-523

BAS70T Marking: 7C

BAS70-04T Marking: 7D

BAS70-05T Marking: 7E

BAS70-06T Marking: 7F

Maximum Ratings @Ta=25℃

Parameter

Symbol

RRM

RWM

FSM

θJA

STG

Limit

100

150

833

-55~+150

Unit

℃/W

℃

Peak Repetitive Peak

Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current

Non-Repetitive Peak Forward Surge Current @ t = 1.0s

Power Dissipation

Thermal Resistance Junction to Ambient

Storage

Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Diode capacitance

Reveres recovery time

Symbol

(BR)

Test

= 10µA

=50V

=1mA

=15mA

=0, f=1MHz

=10mA,Irr=0.1xI

=100Ω

conditions

Min

Max

Unit

100

410

1000

A,May,2011

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