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3866S

Description
NPN power transistor
CategoryDiscrete semiconductor   
File Size65KB,3 Pages
ManufacturerShenZhen Jingdao Electronic Co.,Ltd.
Websitehttp://www.jdsemi.cn

Shenzhen Jingdao Electronics Co., Ltd. is a professional semiconductor discrete device packaging company. The company was established in 1994 with a registered capital of RMB 40 million. It is a high-tech enterprise integrating R&D, production, sales and technical services. It is one of the earliest companies in my country engaged in large-scale production of high reverse voltage, medium and high power diodes and triodes, and is a member unit of the China Semiconductor Industry Association.

The company currently has more than 300 employees, of which more than 50 are technical and management personnel with college degrees or above, including several doctors, masters and senior engineers. The company has been awarded the title of "National High-tech Enterprise", and its trademark has been rated as "Guangdong Famous Trademark", and has obtained many patents. It has strong product research and development capabilities, and many new products are mass-produced and launched every year.

We implement a strict quality management system. In 1999, we successfully passed the ISO9001 system certification. In 2001, we completed the ISO9001-2000 version conversion work. In 2004, our products passed the Intertek test on WEEE 2002/96/EC requirements and met the EU RoHS directive requirements. In 2009, we passed the ISO14001 environmental management system certification and the ISO2000-2008 version conversion work. Our main products include bipolar transistors, power field effect transistors, Schottky diodes, fast recovery diodes, ICs, etc. The main packaging forms are TO-92, TO-251, TO-252, TO-126, TO-126F, SOT-82, TO-220, TO-220F, TO-262, TO-263, SOD-59, TO-3P, etc. The products are mainly used in computer switching power supplies, adapters, inverters, LED driver power supplies, energy-saving lamps, electronic ballasts and various chargers.

We have a production workshop of 9,800 square meters, including a 1,500 square meter 10,000-level cleanroom, with a production capacity of 4.5 million pieces per day, and annual production and sales value of more than 200 million yuan for several consecutive years. The company has highly qualified employees, internationally advanced fully automatic production equipment and testing instruments, scientific production management system and strict quality assurance system; high quality, high efficiency and professional development are the consistent goals of our company. The company takes sincere reputation, first-class quality and service as the basis of development, and is willing to cooperate sincerely with all customers for common development; it can produce and supply according to user requirements.

Product Center

Bipolar power transistors: Ultra-high reverse voltage series (Bvceo>600V) (22); BU103BH*, BU103DH*, BU103AH*, DK53H, BU8403, S13003AD-H, H13003H, H13003AH, BU3150F, BU5027S......; High reverse voltage series (Bvceo: 400-600V) (33); 13001-0, 13001-2, 13001-A, BU102S, BU102, BU103, BU103T, DK52, DK52A......; High reverse voltage integrated diode series (Bvceo: 400-600V) (36) BU102D, BU13003D, BU103T, BU103BD, BU103AD, BU103A, DK52D, DK53D, DK53TD......; Medium reverse voltage series (Bvceo: 300-400V) (1) 13007S; Low reverse voltage series (Bvceo<300V) (9) B647(PNP)*, D667(NPN)*, B772PC(PNP)*, B772PC(PNP)*, D882PC(NPN)*, D882PC(NPN)*, B772P(PNP)*, D882P(NPN)*, D880(NPN); Low reverse voltage integrated diode series (Bvceo<300V) (22) BU202DL, BU202ADL, BU203DL, BU206DL, DK53DL, DK53ADL, DK54DL, S13003DL, S13003ADL......

Power field effect tube: N-channel VDMOS series (71) CM9N20, CM18N20, CM40N20, CM6N40, CM6N40C......; N-channel Trench-MOS series (12) CM60N03, CM60N03C, CM100N03, CM140N04, CM220N04......

High power Schottky, fast recovery diodes: Schottky diode series (13) 16S45T, 16S45, 20S45, 30S45, 30S45P, 50S45P, 10S100, 10S100F, 20S100, 20S100F, 50S100P, 10S150, 20S150; Fast recovery diode series (15) 12F020, 12F020F, 16F020C, 16F020, 20F020......

Integrated Circuits (31): JD3202D, JD3205T, JD3301D, JD3306S, JD3306D......

封装形式(16):TO-92/TO-92T、TO-126S、TO-126D、TO-126、TO-126F、SOT-82、TO-826、TO-251、TO-252、TO-220、TO-220A、TO-220F、TO-220FL/TO-220FH、SOD-59、SOD-59F、TO-3P(B)

Packaging specifications (25): plastic bag, braided tape

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3866S Overview

NPN power transistor

Features

Product Name: NPN Power Transistor


Product model: 3866S


Product Usage:


Computer switching power supply, electronic ballast, energy-saving lamp


Chargers and various power switching circuits.


main feature:


Silicon triple diffusion planar process, large current capacity.



product data:


Collector-emitter breakdown voltage BVceo: 700V


Collector-base breakdown voltage BVcbo: 900V


Collector current Ic: 2.5A


Maximum allowable collector dissipation power PCM: 40W


DC current gain hFE: 15-35



Package: TO-220



3866S Preview

Download Datasheet
深圳市晶导电子有限公司
Shenzhen Jingdao Electronic Co.,Ltd.
TEL
0755-29799516
FAX
0755-29799515
Http://www.jdsemi.cn
3866S
NPN
功率三极管
*
主要用途 :
计算机开关电源、 电子镇流器、节½灯
充电器及各类 功率开关电路。
主要特点:
*
主要特点:
硅三重扩散平面工艺、输出特性½、电流容量大。
B
基极
C
集电极
E
发射极
极限值:
极限值:
( Tc=25
)
额定值
700
900
9
2.5
40
150
55
½
150
V
V
V
A
W
½
集电极-发射极击穿电压
集电极-基极击穿电压
发射极-基极击穿电压
最大集电极直流电流
最大耗散功率
最高结温
贮存温度
BV
CEO
BV
CBO
BV
EBO
Icm
Pcm
Tjm
Tstg
电特性:
电特性:
( Tc=25
)
参数名称
集电极-发射极击穿电压
集电极-基极击穿电压
发射极-基极击穿电压
集电极-发射极反向漏电流
集电极-基极反向漏电流
发射极-基极反向漏电流
共发射极直流电流增益
集电极-发射极饱和压降
下降时间
特征频率
符号
BV
CEO
BV
CBO
BV
EBO
I
CEO
I
CBO
I
EBO
H
FE
V
CE
(sat)
t
f
f
T
测 试 条 件
I
C
=1mA
I
C
=1mA
I
E
=1mA
V
CE
=680V
V
CB
=880V
V
EB
=7V
V
CE
=5V
V
CE
=5V
I
C
=1A
I
B
=0
I
E
=0
I
C
=0
I
B
=0
I
E
=0
I
C
=0
I
C
=0.5A
I
C
=1mA
I
B
=0.5A
规范值
最小值
700
900
9
2.5
10
10
15
8
0.6
0.5
4
35
最大值
单½
V
V
V
uA
uA
uA
V
uS
MHz
I
C
=1A
I
B1
=I
B2
=0.2A
V
CE
=300V
V
CE
=10V
I
C
=0.1A
f =1MHz
Jingdao Electronic Corporation V01
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