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PT23T8050

Description
Transistor
CategoryDiscrete semiconductor   
File Size108KB,4 Pages
ManufacturerPrisemi
Websitehttp://www.prisemi.com/

Shanghai Xindao Electronic Technology Co., Ltd. is located in Zhangjiang High-tech Park. It is a high-tech enterprise dedicated to the research and development, design and sales of integrated circuit chips.

Core Conductor Electronics is actively committed to the technical research of semiconductor power devices and high-end integrated circuit chips. The company's scientific research investment has increased by more than 70% for many consecutive years, and has established a first-class laboratory in China, undertaking a number of Shanghai and national scientific research projects.

Providing you with excellent products, excellent quality, and excellent services is the constant pursuit of Xindao Electronics. Over the years, Xindao Electronics has always adhered to the core of user needs. While focusing on the development of the domestic market, it has actively expanded overseas markets. At present, its products have been exported to the United States, Japan, South Korea, Southeast Asia and other countries and regions. Xindao Electronics has won the trust and praise of many customers with high-quality products and first-class services, and established a good brand image for the company.

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PT23T8050 Overview

Transistor

Parameters

•Transition frequency fT (MHz):--


•DC Current Gain hFE:100


•Collector Current IC (A):1.5


•Collector-Base Breakdown Voltage BVCBO (V):40


•Emitter-Base Breakdown Voltage BVEBO(V):6.0


•Collector-Emitter Saturation Voltage VCE(sat) (V):0.5


•Collector-Emitter Breakdown Voltage BVCEO (V):25


•Package: TODAY-23

PT23T8050 Preview

Download Datasheet
PT23T8050
Transistor
Feature
3 - Collector
1 - Base
This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant.
2 - Emitter
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter -Base Breakdown Voltage
Base Cutoff Current
Collector Current
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
C
Conditions
I
C
=2.0mA,I
B
=0
I
C
=10uA,I
E
=0
I
E
=100uA,I
C
=0
V
CB
=35V
Min.
25
40
6.0
Typ.
Max.
Units
V
V
V
50
1.5
nA
A
Absolute maximum rating@25℃
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Symbol
H
FE
V
CE(sat)
V
BE(sat)
Conditions
I
C
=100mA,V
CE
=1.0V
I
C
=500mA,V
CE
=1.0V
I
C
=500mA,I
B
=50mA
I
C
=500mA,I
B
=50mA
Min.
100
40
-
Typ.
Max.
250
-
0.5
1.2
Units
-
V
V
Rev.06
1
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