KP200 datasheet, PDF - EEWORLD Datasheet

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KP200: DescriptionOrdinary power thyristor; CategoryDiscrete semiconductor; File Size156KB，2 Pages; ManufacturerYANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD.

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KP200 Overview

Ordinary power thyristor

Features

Product Name: Ordinary Power Thyristor

Product model: KP200

Product Usage:

High-power thyristors for phase control

Features:

Fully diffused structure, center-amplified gate structure, blocking voltage up to 2000 V, high capacity dV/dt, full press-fit

product data:

Forward repetitive peak voltage VDRM/reverse repetitive peak voltage VRRM: 600-2000V

Non-repetitive surge current ITSM: 2.8E3A

Peak on-state voltage drop VTM: ≤2.0V

Average on-state current IT: 200A

Size: Ф25.4mm

Package: KT25

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扬州中芯晶来半导½制造有限公司

YANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD

1.0

″

KP200

功率晶闸管

■用途

用于相½控制的大功率晶闸管

■特点

全扩散结构、中心放大门极结构、阻断电压至2000

V、

高容量

dV/dt、全压接式

600 V- 2000 V, 200 A

KT25

■电特性和额定值

断态特性

阻断电压

RRM (1)

DRM (1)

600

800

1200

1400

1600

2000

RSM (1)

700

900

1325

1525

1750

2200

φ19.1

■产品外½尺寸

0.8min

2-φ3.5×1.9

4.75

±5

φ41

27.5

600

800

1200

1400

1600

2000

RRM

反向重复峰值电压

DRM

正向重复峰值电压

RSM

=反向不重复峰值电压

(2)

反向和正向重复峰值电流

电压上升率额定值

注:

φ19.1

φ36.7

RRM /

DRM

dV/dt

(4)

15 mA

25 mA

(3)

300 V/s

(1) 50 Hz/60 Hz

正弦波，温度范围

-40℃ ~+125

℃.

(2) 10 ms脉½

(3)T

= 125

℃.

(4) 67%额定电压V

DRM

，门极开路T

= 125

℃.

(5)

不重复值

(6)此电流上升率根据EIA/NIMA标准RS-397定义及条件。

通态特性

参

数

符号

T(AV)

TRMS

TSM

di/dt

最小值

最大值

200

304

3.0×10

2.8×10

8.0×10

200

2.2

300

150

1.4

典型

值

单½

A/s

8.3 ms,

正弦半波导通角,T

=125

℃

10 ms,

正弦半波导通角,

=125

℃

8.3 ms

或

10 ms

=24 V;

= 12

Ω

=24 V;

= 2.5 A

=628 A;

占空比≤0.01%

不重复

条

件

通态平均电流

通态电流方均根值

不重复浪涌电流

t值

擎½电流

维持电流

峰值通态压降

电流上升率

(5),( 6)

电流上升率

(6)

正弦波,180

导通角,T

=65

℃

0.8min

14±1

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